Authors
Michael L Rieger, John P Stirniman
Publication date
1996/12/27
Conference
16th Annual BACUS Symposium on Photomask Technology and Management
Volume
2884
Pages
323-332
Publisher
SPIE
Description
Optical proximity correction (OPC) adds complex convolutions to mask pattern shapes which can stress mask-making capabilities. Because the `decorations'--jogs, serifs, assist features--created by proximity correction are approximations to `ideal' corrected shapes there are many variations of corrected mask shapes that provide the same result on the wafer. With an understanding of specific mask- making limitations it is possible to leverage this leeway to create more `mask friendly' patterns with OPC.
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Scholar articles
ML Rieger, JP Stirniman - 16th Annual BACUS Symposium on Photomask …, 1996