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Improvement of light extraction efficiency of InGaN quantum wells light emitting diodes (LEDs) using Si O 2/polystyrene microspheres was demonstrated experimentally. The utilization of Si O 2/polystyrene microlens arrays on InGaN quantum wells LEDs, deposited via rapid convective deposition, allows the increase of the effective photon escape cone and reduction in the Fresnel reflection. Improvement of output power by 219% for InGaN quantum wells LEDs emitting at peak wavelength of 480 nm with Si O 2/polystyrene microspheres microlens arrays was demonstrated.