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Epitaxial layers of InSb have been grown on Si substrates by molecular beam epitaxy. Room‐temperature electron mobilities are 48 000 and 39 000 cm²/V s for 3.2 μm‐thick InSb with and without a thin GaAs buffer, respectively. The corresponding carrier concentrations are 2.2×10¹⁶ and 2.7×10¹⁶ cm⁻³. A sample with an InSb thickness of 8 μm exhibited room‐temperature mobilities as high as 55 000 cm²/V s with carrier concentrations of about 2.0×10¹⁶ cm⁻³. A sharp band‐edge transmission spectrum is observed at room temperature for the 8 μm layer.