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A microscopic theory is used to analyze optical gain in In Ga N∕ Ga N quantum wells (QW). Experimental data are obtained from Hakki–Paoli measurements on edge-emitting lasers for different carrier densities. The simulations are based on the solution of the quantum kinetic Maxwell–Bloch equations, including many-body effects and a self-consistent treatment of piezoelectric fields. The results confirm the validity of a QW gain description for this material system with a substantial inhomogeneous broadening due to structural variation. They also give an estimate of the nonradiative recombination rate.

The optical properties of group-III nitride-based quantum wells (QW) have been subject to active research due to their application in short-wavelength emitters on the one hand, and their complex material properties on the other hand. In the wurtzite structure, these materials show strong internal spontaneous and …