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In this paper, we present full-band atomistic quantum transport simulations of single- and few-layer field-effect transistors (FETs) including electron-phonon scattering. The Hamiltonian and the electron-phonon coupling constants are determined from ab initio density-functional-theory calculations. It is observed that the phonon-limited electron mobility is enhanced with increasing layer thicknesses and decreases at high charge concentrations. The electrostatic control is found to be crucial even for a single-layer device. With a single-gate configuration, the double-layer FET shows the best intrinsic performance with an ON current, , but with a double-gate contact the transistor with a triple-layer channel delivers the highest current with . The charge in the channel is almost independent of the number of layers, but the injection velocity increases significantly with the …