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Band-to-band tunneling field-effect transistors (TFETs) made of a vertical heterojunction of single-layer MoTe ₂ and SnS ₂ are investigated by means of 3-D, full-band, atomistic quantum-transport simulations relying on a first-principles basis. At a supply voltage V _dd = 0.4 V and OFF-current IOFF = 10 ^-6 μA/μm, ON-state currents >75 μA/μm are reported for both n- and p-type logic switches. Our findings indicate that metal-dichalcogenide heterojunction TFETs represent a viable option in low-power electronics.