Authors
Jason K Cooper, Sheraz Gul, Francesca M Toma, Le Chen, Per-Anders Glans, Jinghua Guo, Joel W Ager, Junko Yano, Ian D Sharp
Publication date
2014/9/23
Journal
Chemistry of Materials
Volume
26
Issue
18
Pages
5365-5373
Publisher
American Chemical Society
Description
A comprehensive approach to understanding the electronic structure of monoclinic scheelite bismuth vanadate (ms-BiVO4), including both valence band (VB) and conduction band (CB) orbital character, is presented. Density functional theory (DFT) calculations are directly compared to experimental data obtained via X-ray absorption spectroscopy (XAS), X-ray emission spectroscopy, resonant inelastic X-ray spectroscopy (RIXS), and X-ray photoelectron spectroscopy to provide a complete portrait of the total and partial density of states (DOS) near the bandgap. DFT calculations are presented to confirm the VB maximum and CB minimum are comprised primarily of O 2p and V 3d orbitals, respectively. Predicted triplet d-manifold splitting of V 3d CB states, arising from lone pair-induced lattice distortions, is quantified by V L- and O K-edge XAS. Furthermore, the partial contributions to the total DOS within both the CB …
Total citations
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Scholar articles
JK Cooper, S Gul, FM Toma, L Chen, PA Glans, J Guo… - Chemistry of Materials, 2014