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(57) ABSTRACT A boule formed by high rate vapor phase growth of Group III-V nitride boules (ingots) on native nitride seeds, from which wafers may be derived for fabrication of microelec tronic device Structures. The boule is of microelectronic device quality, eg, having a transverse dimension greater than 1 centimeter, a length greater than 1 millimeter, and a top surface defect density of less than 107 defects cm. The Group III-V nitride boule may be formed by growing a Group III-V nitride material on a corresponding native Group III-V nitride Seed crystal by vapor phase epitaxy at a growth rate above 20 micrometers per hour.