Inventors
George R Brandes
Publication date
2008/12/11
Patent office
US
Application number
11758395
Description
A method of forming an AllnGaN alloy-based electronic or optoelectronic device structure on a nitride substrate and subsequent removal of the substrate. An AllnGaN alloy based electronic or optoelectronic device structure formed on a nitride substrate is freed from the substrate on Which it Was grown.
Total citations
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