Inventors
Jeffrey S Flynn, George R Brandes
Publication date
2011/4/5
Patent office
US
Patent number
7919791
Application number
10107001
Description
at the epitaxial film Surface, to form a delta doping layer thereon, terminating the delta doping; resuming deposition of semiconductor material to deposit semiconductor material on the delta doping layer, in a second epitaxial film growth process; and continuing the semiconductor material second epitaxial film growth process to a predetermined extent, to form a doped microelectronic device structure, wherein the delta doping layer is internalized in semiconductor material deposited in the first and second epitaxial film growth pro
Total citations
Scholar articles
JS Flynn, GR Brandes - US Patent 7,919,791, 2011