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In this work, we demonstrate the fabrication of silicon nanowires down to 22nm wide using trilayer nanoimprint lithography and wet etching. Using the same template prepared by E-beam lithography (EBL), nanowires with top width of 22nm and 75nm are fabricated on boron-doped top silicon layer of SOI substrate. The two samples are tested in 250ppm NO₂ ambient for gas detection. The 22nm wide one shows a much higher relative sensitivity than the 75nm wide one. The simulation which calculates the carrier density by solving Poisson equation was carried out and the results well explain the sensitivity disparity between the two samples.