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The effects of residues introduced during the transfer of chemical vapor deposited graphene from a Cu substrate to an insulating (SiO 2) substrate on the physical and electrical of the transferred graphene are studied. X-ray photoelectron spectroscopy and atomic force microscopy show that this residue can be substantially reduced by annealing in vacuum. The impact of the removal of poly (methyl methacrylate) residue on the electrical properties of graphene field effect devices is demonstrated, including a nearly 2× increase in average mobility from 1400 to 2700 cm 2/Vs. The electrical results are compared with graphene doping measurements by Raman spectroscopy.