متابعة
Haibo Li
Haibo Li
Purdue University, Sandisk, Western Digital, SK Hynix memory solutions, Yangtze Memory Technologies
بريد إلكتروني تم التحقق منه على micron.com
عنوان
عدد مرات الاقتباسات
عدد مرات الاقتباسات
السنة
Dielectrophoretic separation and manipulation of live and heat-treated cells of Listeria on microfabricated devices with interdigitated electrodes
H Li, R Bashir
Sensors and actuators B: chemical 86 (2-3), 215-221, 2002
4042002
Characterization and modeling of a microfluidic dielectrophoresis filter for biological species
H Li, Y Zheng, D Akin, R Bashir
Journal of microelectromechanical systems 14 (1), 103-112, 2005
1202005
Selective data recycling in non-volatile memory
Y Cai, F Zhang, H Li, J Lee
US Patent 10,002,073, 2018
111*2018
Threshold voltage adjustment for a select gate transistor in a stacked non-volatile memory device
H Li, X Costa, M Higashitani, ML Mui
US Patent 8,867,271, 2014
912014
Real-time virus trapping and fluorescent imaging in microfluidic devices
D Akin, H Li, R Bashir
Nano Letters 4 (2), 257-259, 2004
722004
Reading voltage calculation in solid-state storage devices
Y Sun, D Zhao, H Li, KS Stoev
US Patent App. 13/917,518, 2014
592014
Erase operation for 3D non-volatile memory with controllable gate-induced drain leakage current
X Costa, H Li, M Higashitani, ML Mui
US Patent 9,019,775, 2015
572015
Detect developed bad blocks in non-volatile memory devices
H Li, S Kim, J Han
US Patent 10,020,072, 2018
39*2018
Modeling of threshold voltage distribution in NAND flash memory: A Monte Carlo method
H Li
IEEE Transactions on Electron Devices 63 (9), 3527-3532, 2016
392016
Soft erase operation for 3D non-volatile memory with selective inhibiting of passed bits
X Costa, H Li, M Higashitani, ML Mui
US Patent 8,787,094, 2014
322014
Erase inhibit for 3D non-volatile memory
H Li, X Costa
US Patent 8,488,382, 2013
322013
Systems and methods of write precompensation to extend life of a solid-state memory
KS Stoev, H Li, D Zhao, Y Sun
US Patent 9,013,920, 2015
312015
Erase operation with controlled select gate voltage for 3D non-volatile memory
H Li, X Costa, C Zhang
US Patent 8,908,435, 2014
312014
Structural characteristics and hardness of zirconium carbide films prepared by tri-ion beam-assisted deposition
XM He, L Shu, HB Li, HD Li, ST Lee
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 16 (4 …, 1998
311998
Erase for 3D non-volatile memory with sequential selection of word lines
X Costa, S Yu, RE Scheuerlein, H Li, ML Mui
US Patent 8,908,444, 2014
282014
Sensing for NAND memory based on word line position
H Li
US Patent 8,441,853, 2013
232013
Data retention monitoring using temperature history in solid state drives
D Zhao, Y Sun, H Li, KS Stoev, MML Syu
US Patent 9,165,668, 2015
202015
Data retention flags in solid-state drives
D Zhao, Y Sun, H Li, JY Yang, K Stoev
US Patent 9,263,136, 2016
192016
High corrosion resistant ZrC films synthesized by ion-beamassisted deposition
XM He, L Shu, HB Li, D Weng
Journal of materials research 14 (2), 615-618, 1999
191999
Using channel-to-channel coupling to compensate floating gate-to-floating gate coupling in programming of non-volatile memory
H Li, G Liang
US Patent 8,395,936, 2013
182013
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مقالات 1–20