| Elevated-Metal–Metal-Oxide Thin-Film Transistor: Technology and Characteristics L Lu, J Li, Z Feng, HS Kwok, M Wong IEEE Electron Device Letters 37 (6), 728-730, 2016 | 61 | 2016 |
| Improved designs for an electrothermal in-plane microactuator AMH Kwan, S Song, X Lu, L Lu, YK Teh, YF Teh, EWC Chong, Y Gao, ... Journal of Microelectromechanical Systems 21 (3), 586-595, 2012 | 57 | 2012 |
| High-performance and reliable elevated-metal metal-oxide thin-film transistor for high-resolution displays L Lu, J Li, HS Kwok, M Wong 2016 IEEE International Electron Devices Meeting (IEDM), 32.2. 1-32.2. 4, 2016 | 51 | 2016 |
| Zinc-oxide thin-film transistor with self-aligned source/drain regions doped with implanted boron for enhanced thermal stability Z Ye, L Lu, M Wong IEEE Transactions on Electron Devices 59 (2), 393-399, 2011 | 51 | 2011 |
| Lattice strain modulation toward efficient blue perovskite light-emitting diodes B Liu, J Li, G Wang, F Ye, H Yan, M Zhang, SC Dong, L Lu, P Huang, T He, ... Science advances 8 (38), eabq0138, 2022 | 48 | 2022 |
| A bottom-gate indium-gallium-zinc oxide thin-film transistor with an inherent etch-stop and annealing-induced source and drain regions L Lu, M Wong IEEE Transactions on Electron Devices 62 (2), 574-579, 2014 | 47 | 2014 |
| The resistivity of zinc oxide under different annealing configurations and its impact on the leakage characteristics of zinc oxide thin-film transistors L Lu, M Wong IEEE Transactions on Electron Devices 61 (4), 1077-1084, 2014 | 44 | 2014 |
| A comparative study on fluorination and oxidation of indium–gallium–zinc oxide thin-film transistors L Lu, Z Xia, J Li, Z Feng, S Wang, HS Kwok, M Wong IEEE Electron Device Letters 39 (2), 196-199, 2017 | 41 | 2017 |
| Metal Reaction-Induced Bulk-Doping Effect in Forming Conductive Source-Drain Regions of Self-Aligned Top-Gate Amorphous InGaZnO Thin-Film Transistors H Yang, X Zhou, H Fu, B Chang, Y Min, H Peng, L Lu, S Zhang ACS Applied Materials & Interfaces 13 (9), 11442-11448, 2021 | 37 | 2021 |
| Fluorination-enabled monolithic integration of enhancement-and depletion-mode indium-gallium-zinc oxide TFTs Z Feng, L Lu, S Wang, J Li, Z Xia, HS Kwok, M Wong IEEE Electron Device Letters 39 (5), 692-695, 2018 | 29 | 2018 |
| An oxidation-last annealing for enhancing the reliability of indium-gallium-zinc oxide thin-film transistors J Li, L Lu, Z Feng, HS Kwok, M Wong Applied Physics Letters 110 (14), 142102, 2017 | 28 | 2017 |
| A comparative study on the effects of annealing on the characteristics of zinc oxide thin-film transistors with gate-stacks of different gas-permeability L Lu, J Li, M Wong IEEE Electron Device Letters 35 (8), 841-843, 2014 | 27 | 2014 |
| Dual Passivation Strategy for High Efficiency Inorganic CsPbI2Br Solar Cells D Zhou, J Huang, J Liu, H Yan, J Zhang, M Zhang, G Liang, L Lu, X Zhang, ... Solar RRL 5 (5), 2100112, 2021 | 24 | 2021 |
| Resilience of Fluorinated Indium-Gallium-Zinc Oxide Thin-Film Transistor Against Hydrogen-Induced Degradation S Wang, R Shi, J Li, L Lu, Z Xia, HS Kwok, M Wong IEEE Electron Device Letters 41 (5), 729-732, 2020 | 24 | 2020 |
| Near-Ideal Top-Gate Controllability of InGaZnO Thin-Film Transistors by Suppressing Interface Defects with an Ultrathin Atomic Layer Deposited Gate Insulator J Li, Y Zhang, J Wang, H Yang, X Zhou, M Chan, X Wang, L Lu, S Zhang ACS Applied Materials & Interfaces, 2023 | 23 | 2023 |
| Characteristics of Elevated-Metal Metal-Oxide Thin-Film Transistors Based on Indium-Tin-Zinc Oxide Z Xia, L Lu, J Li, Z Feng, S Deng, S Wang, HS Kwok, M Wong IEEE Electron Device Letters 38 (7), 894-897, 2017 | 23 | 2017 |
| High precision active-matrix self-capacitive touch panel based on fluorinated ZnO thin-film transistor Z Ye, M Wong, MT Ng, KH Chui, CK Kong, L Lu, T Liu, JK Luo Journal of Display Technology 11 (1), 22-29, 2015 | 23 | 2015 |
| A Bottom-Gate Metal–Oxide Thin-Film Transistor With Self-Aligned Source/Drain Regions Z Xia, L Lu, J Li, HS Kwok, M Wong IEEE Transactions on Electron Devices 65 (7), 2820-2826, 2018 | 22 | 2018 |
| Top-Gate Amorphous Indium-Gallium-Zinc-OxideThin-Film Transistors With Magnesium Metallized Source/Drain Regions H Peng, B Chang, H Fu, H Yang, Y Zhang, X Zhou, L Lu, S Zhang IEEE Transactions on Electron Devices 67 (4), 1619-1624, 2020 | 21 | 2020 |
| High-Performance Self-Aligned Top-Gate Amorphous InGaZnO TFTs with 4 nm-Thick Atomic-Layer-Deposited AlOx Insulator J Li, Y Zhang, J Wang, H Yang, X Zhou, M Chan, X Wang, L Lu, S Zhang IEEE Electron Device Letters, 2022 | 20 | 2022 |
王文 (Man WONG)Department of Electronic and Computer Engneering, The Hong Kong University of Science and TechnologyBestätigte E-Mail-Adresse bei ieee.org
