Michal Bockowski

Michal Bockowski

Institute of High Pressure Physics PAS
Verified email at unipress.waw.pl
Cited by 9861
gallium nitride GaN semiconductors II-VI III-V
Wei Bai（白伟）

Wei Bai（白伟）

East China Normal University (ECNU)
Verified email at mail.sitp.ac.cn
Cited by 1675
MBE II-VI Magnetic Semiconductor AMR Ferroelectrics and Multiferroics
Lutsenko Evgenii

Lutsenko Evgenii

Assistant Professor
Verified email at ifanbel.bas-net.by
Cited by 1374
laser LED III-V II-VI AlInGaN
Frank M. Kiessling

Frank M. Kiessling

Leibniz Institut für Kristallzüchtung
Verified email at ikz-berlin.de
Cited by 1138
Crystal growth silicon II-VI III-V point defects
Rajib Saha

Rajib Saha

Institute Postdoctoral Fellow, Indian Institute of Technology Bombay
Verified email at iitb.ac.in
Cited by 443
III-V II-VI Optoelectronicdevices Perovskites
Tomoki Abe

Tomoki Abe

Tottori University
Verified email at tottori-u.ac.jp
Cited by 439
semiconductor II-VI photodiode optical modulator