Hiroshi AMANO (天野　浩)

Hiroshi AMANO (天野　浩)

Nagoya University (名古屋大学)
Verified email at nuee.nagoya-u.ac.jp
Cited by 60709
Semiconductor devices Opto electronics Power devices High frequency devices photocathode
Jae Kyeong Jeong

Jae Kyeong Jeong

Hanyang Univ.
Verified email at hanyang.ac.kr
Cited by 25980
Field Effect Transistors Flexible Electronics Power Devices Oxide TFT Electroceramics
Tsunenobu Kimoto

Tsunenobu Kimoto

Kyoto University
Verified email at kyoto-u.ac.jp
Cited by 25344
Semiconductor Physics Power Devices Semiconductor Devices
Yifeng Wu

Yifeng Wu

GaNext
Verified email at ganext.com
Cited by 19299
Power devices GaN Power electronics
Anant Agarwal

Anant Agarwal

Professor of Electrical Engineering, Ohio State University
Verified email at ieee.org
Cited by 16304
Wide Band Gap Semiconductors Power Devices Power Electronics Silicon Carbide
Mikael Östling

Mikael Östling

KTH Royal Institute of Technology
Verified email at kth.se
Cited by 14731
Nanoelectronics Device technology power devices
phil mawby

phil mawby

professor of power electronics, School of Engineering, university of warwick, UK
Verified email at warwick.ac.uk
Cited by 11068
power electronics power devices semiconductors
Ray Hua Horng

Ray Hua Horng

National Yang Ming Chiao Tung University
Verified email at nycu.edu.tw
Cited by 10175
Power devices optoelectronicd LEDs Laser Solar cells
Jonathan J. Wierer, Jr.

Jonathan J. Wierer, Jr.

North Carolina State University, Department of Electrical and Computer Engineering
Verified email at ncsu.edu
Cited by 9859
semiconductor devices III-nitride light-emitting diodes laser diodes power devices
Ranbir Singh

Ranbir Singh

GeneSiC, Cree, NIST, Cree Research, North Carolina State University
Verified email at ieee.org
Cited by 7272
SiC wide bandgap Silicon Carbide power devices cryogenic
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