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Stephan Wirths
Hitachi Energy Research
Verified email at hitachienergy.com
Cited by 4250
SiC Power MOSFETs
Semiconductor Devices and Epitaxy
Fausto Stella
Politecnico di Torino
Verified email at polito.it
Cited by 331
Juntion temperature estimation
SiC power MOSFETs
AC drives
matrix converter.
Salvatore Race
R&D BiMOS engineer, Hitachi Energy
Verified email at hitachienergy.com
Cited by 131
Power devices
wide-bandgap semiconductors
SiC power MOSFETs
electro-thermal modeling
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