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Rekha Reddy (Rekha S Pai)
Rekha Reddy (Rekha S Pai)
Verified email at ngc.com
Title
Cited by
Year
Back-contact thin film semiconductor device structures and methods for their production
C Youtsey, R Reddy, C Stender
US Patent 11,398,575, 2022
22022
Radiation hardening of dual junction solar cells
R Tatavarti, K Forghani, R Reddy, JR D'Rozario, GT Nelson, S Hubbard
2020 47th IEEE Photovoltaic Specialists Conference (PVSC), 2258-2261, 2020
52020
MOVPE growth of AlInP–InGaP distributed Bragg reflectors
K Forghani, R Reddy, D Rowell, R Tatavarti
IEEE Journal of Photovoltaics 10 (3), 754-757, 2020
52020
Systems and methods for perforation and ohmic contact formation for GaN epitaxial lift-off using an etch stop layer
C Youtsey, R McCarthy, R Reddy
US Patent 10,522,363, 2019
52019
epitaxial lift-off of GaN and related materials for device applications
P Fay, J Wang, L Cao, J Xie, E Beam, R McCarthy, R Reddy, C Youtsey
ECS Transactions 92 (4), 97, 2019
22019
Movpe growth of alinp-ingap distributed bragg reflectors (dbr) for monolithic integration into multijunction solar cells
K Forghani, R Reddy, D Rowell, R Tatavarti
2019 IEEE 46th Photovoltaic Specialists Conference (PVSC), 0227-0229, 2019
32019
Epitaxial Lift-Off for Vertical GaN Power Devices
P Fay, J Wang, L Cao, R McCarthy, R Reddy, C Youtsey, J Xie
Government Microcircuit Applications and Critical Technologies Conf …, 2019
12019
Ion‐Implant Isolated Vertical GaN p‐n Diodes Fabricated with Epitaxial Lift‐Off From GaN Substrates (Phys. Status Solidi A 4∕ 2019)
J Wang, R McCarthy, C Youtsey, R Reddy, J Xie, E Beam, L Guido, L Cao, ...
physica status solidi (a) 216 (4), 1970019, 2019
2019
Ion‐Implant Isolated Vertical GaN p‐n Diodes Fabricated with Epitaxial Lift‐Off From GaN Substrates
J Wang, R McCarthy, C Youtsey, R Reddy, J Xie, E Beam, L Guido, L Cao, ...
physica status solidi (a) 216 (4), 1800652, 2019
42019
High-voltage vertical GaN pn diodes by epitaxial liftoff from bulk GaN substrates
J Wang, R McCarthy, C Youtsey, R Reddy, J Xie, E Beam, L Guido, L Cao, ...
IEEE Electron Device Letters 39 (11), 1716-1719, 2018
232018
The 2018 GaN power electronics roadmap
H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ...
Journal of Physics D: Applied Physics 51 (16), 163001, 2018
11412018
Epitaxial Lift-Off from Bulk GaN Wafers for Substrate Reuse and Cost Reduction
LG Robert McCarthy, Chris Youtsey,Rekha Reddy, Andy Xie, Edward Beam ...
2017 MRS Fall Meeting, 2017
2017
Wafer‐scale epitaxial lift‐off of GaN using bandgap‐selective photoenhanced wet etching (Phys. Status Solidi B 8/2017)
C Youtsey, R McCarthy, R Reddy, K Forghani, A Xie, E Beam, J Wang, ...
physica status solidi (b) 254 (8), 1770241, 2017
12017
Wafer‐scale epitaxial lift‐off of GaN using bandgap‐selective photoenhanced wet etching
C Youtsey, R McCarthy, R Reddy, K Forghani, A Xie, E Beam, J Wang, ...
physica status solidi (b) 254 (8), 1600774, 2017
442017
Through-Epitaxial-Via Back-Contact Multi-Junction Solar Cells Fabricated Using Epitaxial Lift-Off
R Reddy, ML Nowakowski, D Rowell, CL Stender, C Youtsey
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC), 3524-3527, 2017
2017
Epitaxial Lift-Off from Native GaN Substrates Using Photoenhanced Wet Etching
C Youtsey, R McCarthy, R Reddy, A Xie, E Beam, J Wang, P Fay, ...
2017 International Conference on Compound Semiconductor Manufacturing Technology, 2017
32017
Thin-film GaN Schottky diodes formed by epitaxial lift-off
J Wang, C Youtsey, R McCarthy, R Reddy, N Allen, L Guido, J Xie, ...
Applied Physics Letters 110 (17), 2017
232017
Demonstration of thin-film GaN Schottky diodes fabricated with epitaxial lift-off
J Wang, C Youtsey, R McCarthy, R Reddy, L Guido, A Xie, E Beam, P Fay
2016 74th Annual Device Research Conference (DRC), 1-2, 2016
32016
Microfabricated gas chromatograph
RA McGill, R Pai, DR Mott, JL Stepnowski, V Nguyen
US Patent 8,132,443, 2012
342012
Self calibration devices for chemical and bio analytical trace detection systems
DJ Nagel, RA McGill, PM Mills, R Pai
US Patent 8,051,697, 2011
2011
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