| Persistent polarization effects and memory properties in ionic-liquid gated InAs nanowire transistors V Demontis, D Prete, E Faella, F Giubileo, V Zannier, O Durante, L Sorba, ... Nano Express, 2024 | | 2024 |
| Dominant n-type conduction and fast photoresponse in BP/MoS2 heterostructures L Viscardi, O Durante, S De Stefano, K Intonti, A Kumar, A Pelella, ... Surfaces and Interfaces 49, 104445, 2024 | 1 | 2024 |
| n‐Type GaSe Thin Flake for Field Effect Transistor, Photodetector, and Optoelectronic Memory A Kumar, A Pelella, K Intonti, L Viscardi, O Durante, F Giubileo, P Romano, ... Advanced Electronic Materials, 2400010, 2024 | | 2024 |
| Multilayer WS2 for low-power visible and near-infrared phototransistors A Pelella, K Intonti, O Durante, A Kumar, L Viscardi, S De Stefano, ... Discover Nano 19 (1), 57, 2024 | 3 | 2024 |
| Optimizing nanostructure deposition process for optical applications J Neilson, V Granata, O Durante, C Ausbeck, TF Bennett, F Bobba, ... Micro & Nano Letters 19 (2), e12186, 2024 | | 2024 |
| Resistive Switching Memory from Dielectric Lignin for Sustainable Electronics S De Stefano, O Durante, R D'Orsi, A Operamolla, M Ambrico, ... Journal of Materials Chemistry C, 2024 | | 2024 |
| WS2 Nanotube Transistor for Photodetection and Optoelectronic Memory Applications A Pelella, A Kumar, K Intonti, O Durante, S De Stefano, X Han, Z Li, Y Guo, ... Small, 2403965, 2024 | | 2024 |
| Search for gravitational-wave transients associated with magnetar bursts in Advanced LIGO and Advanced Virgo data from the third observing run R Abbott, MG Benjamin, T Creighton, MC Diaz, F Llamas, S Mukherjee, ... The Astrophysical Journal, 2024 | 2 | 2024 |
| A joint Fermi-GBM and Swift-BAT analysis of gravitational-wave candidates from the third gravitational-wave observing run C Fletcher, J Wood, R Hamburg, P Veres, CM Hui, E Bissaldi, MS Briggs, ... The Astrophysical Journal 964 (2), 1-35, 2024 | 1 | 2024 |
| Memory effect and coexistence of negative and positive photoconductivity in black phosphorus field effect transistor for neuromorphic vision sensors A Kumar, K Intonti, L Viscardi, O Durante, A Pelella, O Kharsah, ... Materials Horizons 11 (10), 2397-2405, 2024 | 4 | 2024 |
| GWTC-2.1: Deep extended catalog of compact binary coalescences observed by LIGO and Virgo during the first half of the third observing run F Acernese, F Barone, F Bobba, M Cannavacciuolo, G Carapella, ... PHYSICAL REVIEW D 109, 02200101-02200145, 2024 | | 2024 |
| Role of substrate and TiO2 content in TiO2: Ta2O5 coatings for gravitational wave detectors O Durante, V Granata, M Magnozzi, A Amato, C Michel, L Pinard, ... Classical and Quantum Gravity 41 (2), 025005, 2023 | 1 | 2023 |
| Two-dimensional α-In2Se3 field effect transistor for wide-band photodetection and non-volatile memory A Pelella, K Intonti, L Viscardi, O Durante, D Capista, M Passacantando, ... Journal of Physics and Chemistry of Solids 183, 111653, 2023 | 4 | 2023 |
| Temperature-dependent photoconductivity in two-dimensional MoS2 transistors A Di Bartolomeo, A Kumar, O Durante, A Sessa, E Faella, L Viscardi, ... Materials Today Nano 24, 100382, 2023 | 45 | 2023 |
| Subthreshold Current Suppression in ReS2 Nanosheet-Based Field-Effect Transistors at High Temperatures O Durante, K Intonti, L Viscardi, S De Stefano, E Faella, A Kumar, ... ACS Applied Nano Materials 6 (23), 21663-21670, 2023 | 2 | 2023 |
| Multiwalled WS₂ nanotubes on interdigitated electrodes for visible-light photodetectors O Durante, S De Stefano, D Capista, M Passacantando, A Zak, F Giubileo, ... 2023 IEEE nanotechnology materials and devices conference (NMDC), 676-680, 2023 | 1 | 2023 |
| Electric Transport Properties In Few-Layers WTe2 Field Effect Transistors Affected by Temperature E Faella, L Viscardi, K Intonti, O Durante, A Pelella, MS Alghamdi, ... 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC), 553-557, 2023 | | 2023 |
| Effect of PMMA capping layer on black phosphorus field effect transistor A Kumar, L Viscardi, E Faella, F Giubileo, K Intonti, A Pelella, O Durante, ... 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC), 77-80, 2023 | | 2023 |
| Optoelectronic properties of two-dimensional α-In2Se3 Field Effect Transistor A Pelella, P Romano, K Intonti, L Viscardi, O Durante, D Capista, ... 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC), 270-271, 2023 | | 2023 |
| Temperature-induced step-like enhancement of drain current in a two-dimensional ReS₂ field-effect transistor S De Stefano, O Durante, F Giubileo, E Faella, K Intonti, A Kumar, ... 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC), 339-340, 2023 | | 2023 |
Filippo GiubileoSenior Researcher at CNR-SPIN Salerno, ItalyVerified email at spin.cnr.it
