| Random Telegraph Noise and Radiation Response of 80 nm Vertical Charge-Trapping NAND Flash Memory Devices with SiON Tunneling Oxide IR Wynocker, EX Zhang, RA Reed, RD Schrimpf, A Arreghini, JP Bastos, ... IEEE Transactions on Nuclear Science, 2024 | | 2024 |
| Defect dynamics in the presence of excess energetic carriers and high electric fields in wide-gap semiconductors A O’Hara, RD Schrimpf, DM Fleetwood, ST Pantelides Journal of Applied Physics 135 (19), 2024 | | 2024 |
| Charge Trapping in Irradiated 3D Devices and ICs EX Zhang, S Toguchi, ZX Guo, ML Alles, RD Schrimpf, DM Fleetwood 2024 IEEE International Reliability Physics Symposium (IRPS), 10C. 3-1-10C. 3-6, 2024 | | 2024 |
| Single-Event Effects in Heavy-Ion Irradiated 3kV SiC Charge-Balanced Power Devices A Sengupta, DR Ball, S Islam, AS Senarath, AL Sternberg, EX Zhang, ... IEEE Transactions on Nuclear Science, 2024 | | 2024 |
| Single-event burnout in homojunction GaN vertical PiN diodes with hybrid edge termination design AS Senarath, S Islam, A Sengupta, MW McCurdy, T Anderson, A Jacobs, ... Applied Physics Letters 124 (13), 2024 | | 2024 |
| Contribution of Secondary Alpha Particles to Soft Error Rates in Space Systems RM Cadena, KM Warren, NA Dodds, JM Trippe, BD Sierawski, DR Ball, ... IEEE Transactions on Nuclear Science, 2024 | | 2024 |
| Defects in as-processed, irradiated, and stressed GaAs-based device structures A O'Hara, X Luo, E Zhang, R Schrimpf, D Fleetwood, S Pantelides Bulletin of the American Physical Society, 2024 | | 2024 |
| Comparative energetics of nanovoid growth in wide-and ultrawide-band gap semiconductors H Pandey, G Mayberry, D Negash, R Schrimpf, D Fleetwood, S Pantelides Bulletin of the American Physical Society, 2024 | | 2024 |
| Single Event Functional Interrupt (SEFI) Sensitivities of a Multicore Microprocessor S Esquer, BD Sierawski, AF Witulski, RD Schrimpf, G Karsai, M Turowski 2024 IEEE Aerospace Conference, 1-11, 2024 | | 2024 |
| Single-Event Burnout in Vertical β-Ga2O3 Diodes with Pt/PtOx Schottky Contacts and High-k Field-Plate Dielectrics S Islam, AS Senarath, E Farzana, DR Ball, A Sengupta, NS Hendricks, ... IEEE Transactions on Nuclear Science, 2024 | 2 | 2024 |
| LET and voltage dependence of single-event burnout and single-event leakage current in high-voltage SiC power devices A Sengupta, DR Ball, AL Sternberg, S Islam, AS Senarath, RA Reed, ... IEEE Transactions on Nuclear Science, 2024 | 3 | 2024 |
| Alpha Particle-Induced Persistent Effects in a COTS 3D-Integrated CMOS Imager MD Hu, MW McCurdy, BD Sierawski, RD Schrimpf, RA Reed, ML Alles IEEE Transactions on Nuclear Science, 2024 | | 2024 |
| Low-frequency noise and defects in AlGaAs/InGaAs/GaAs pseudomorphic high-electron mobility transistors XY Luo, A O'Hara, X Li, PF Wang, EX Zhang, RD Schrimpf, ST Pantelides, ... Journal of Applied Physics 135 (2), 2024 | 2 | 2024 |
| Low-frequency noise due to iron impurity centers in GaN-based HEMTs DM Fleetwood, X Li, EX Zhang, RD Schrimpf, ST Pantelides IEEE Transactions on Electron Devices, 2024 | 3 | 2024 |
| Total-Ionizing-Dose Effects in IGZO Thin-Film Transistors with SiO2 Oxygen-Penetration Layers Z Guo, EX Zhang, A Chasin, D Linten, A Belmonte, G Kar, RA Reed, ... IEEE Transactions on Nuclear Science, 2023 | 1 | 2023 |
| Low-Frequency Noise and Deep Level Transient Spectroscopy in npn Si Bipolar Junction Transistors Irradiated with Si Ions X Luo, J Montes, SD Koukourinkova, BL Vaandrager, ES Bielejec, ... IEEE Transactions on Nuclear Science, 2023 | | 2023 |
| Defect and impurity-center activation and passivation in irradiated AlGaN/GaN HEMTs X Li, PF Wang, X Zhao, H Qiu, M Gorchichko, MW McCurdy, RD Schrimpf, ... IEEE Transactions on Nuclear Science, 2023 | 4 | 2023 |
| Evaluating the Robustness of Complementary Channel Ferroelectric FETs Against Total Ionizing Dose Towards Radiation-Tolerant Embedded Nonvolatile Memory Z Jiang, Z Guo, X Luo, M Sayed, Z Faris, H Mulaosmanovic, S Duenkel, ... IEEE Electron Device Letters, 2023 | 1 | 2023 |
| First-principles approach to closing the 10–100 eV gap for charge-carrier thermalization in semiconductors DO Nielsen, CG Van de Walle, ST Pantelides, RD Schrimpf, ... Physical Review B 108 (15), 155203, 2023 | 5 | 2023 |
| Effects of interface traps and hydrogen on the low-frequency noise of irradiated MOS devices DM Fleetwood, EX Zhang, RD Schrimpf, ST Pantelides, S Bonaldo IEEE Transactions on Nuclear Science, 2023 | 4 | 2023 |
Daniel M. FleetwoodProfessor of Electrical Engineering, Vanderbilt UniversityVerified email at vanderbilt.edu
