| Mechanism of Fermi Level Pinning for Metal Contacts on Molybdenum Dichalcogenide X Wang, Y Hu, SY Kim, K Cho, RM Wallace ACS Applied Materials & Interfaces 16 (10), 13258-13266, 2024 | 1 | 2024 |
| Origins of Fermi level pinning for Ni and Ag metal contacts on tungsten dichalcogenides X Wang, Y Hu, SY Kim, R Addou, K Cho, RM Wallace ACS nano 17 (20), 20353-20365, 2023 | 7 | 2023 |
| Epigenome-wide DNA methylation association study of circulating IgE levels identifies novel targets for asthma K Recto, P Kachroo, T Huan, D Van Den Berg, GY Lee, H Bui, DH Lee, ... EBioMedicine 95, 2023 | 2 | 2023 |
| Helicobacter pylori Seropositivity, ABO Blood Type, and Pancreatic Cancer Risk From 5 Prospective Cohorts AA Lee, QL Wang, J Kim, A Babic, X Zhang, K Perez, K Ng, J Nowak, ... Clinical and Translational Gastroenterology 14 (5), e00573, 2023 | 5 | 2023 |
| Impact of process anneals on high-k/β-Ga2O3 interfaces and capacitance R Hawkins, X Wang, N Moumen, RM Wallace, CD Young Journal of Vacuum Science & Technology A 41 (2), 2023 | 3 | 2023 |
| In situ isotope study of indium diffusion in InP/Al2O3 stacks Z Feng, X Qin, X Chen, Z Li, R Huang, Y Shen, D Ding, Y Wang, M Jing, ... Applied Physics Letters 120 (3), 2022 | 3 | 2022 |
| The Dielectric Properties of Two-dimensional Materials and Their Applications in Electronic Devices: a First-principles Study MR Osanloo University of Texas at Dallas, 2022 | 1 | 2022 |
| Investigating interface states and oxide traps in the MoS2/oxide/Si system E Coleman, G Mirabelli, P Bolshakov, P Zhao, E Caruso, F Gity, ... Solid-State Electronics 186, 108123, 2021 | 7 | 2021 |
| Metal oxide semiconductor field effect transistor with crystalline oxide layer on a III-V material WE Wang, MS Rodder, RM Wallace, X Qin US Patent 11,081,590, 2021 | | 2021 |
| Understanding and optimization of graphene gas sensors T Xie, Q Wang, RM Wallace, C Gong Applied Physics Letters 119 (1), 2021 | 46 | 2021 |
| Controlling the Pd Metal Contact Polarity to Trigonal Tellurium by Atomic Hydrogen‐Removal of the Native Tellurium Oxide CM Smyth, G Zhou, AT Barton, RM Wallace, CL Hinkle Advanced Materials Interfaces 8 (7), 2002050, 2021 | 11 | 2021 |
| Interface Chemistry and Band Alignment Study of Ni and Ag Contacts on MoS2 X Wang, SY Kim, RM Wallace ACS Applied Materials & Interfaces 13 (13), 15802-15810, 2021 | 28 | 2021 |
| Passivation of III–V surfaces with crystalline oxidation P Laukkanen, MPJ Punkkinen, M Kuzmin, K Kokko, J Lång, RM Wallace Applied Physics Reviews 8 (1), 2021 | 31 | 2021 |
| Interface Chemistry and Band Alignment Study of Ni and Ag Contacts on MoS₂ X Wang, SY Kim, RM Wallace | | 2021 |
| Morphology-dependent fluorescence of europium-doped cerium oxide nanomaterials AE D'Achille, RM Wallace, JL Coffer Nanoscale Advances 3 (12), 3563-3572, 2021 | 10 | 2021 |
| Modification of the Electronic Transport in Atomically Thin WSe2 by Oxidation YC Lin, BM Bersch, R Addou, K Xu, Q Wang, CM Smyth, B Jariwala, ... Advanced Materials Interfaces 7 (18), 2000422, 2020 | 17 | 2020 |
| Atomically Controlled Tunable Doping in High‐Performance WSe2 Devices CS Pang, TYT Hung, A Khosravi, R Addou, Q Wang, MJ Kim, RM Wallace, ... Advanced Electronic Materials 6 (8), 1901304, 2020 | 64 | 2020 |
| Atomic layer deposition of layered boron nitride for large-area 2D electronics J Lee, AV Ravichandran, J Mohan, L Cheng, AT Lucero, H Zhu, Z Che, ... ACS applied materials & interfaces 12 (32), 36688-36694, 2020 | 26 | 2020 |
| Dielectric breakdown in epitaxial BaTiO3 thin films HW Wu, P Ponath, EL Lin, RM Wallace, C Young, JG Ekerdt, AA Demkov, ... Journal of Vacuum Science & Technology B 38 (4), 2020 | 5 | 2020 |
| Origins of Fermi Level Pinning between Tungsten Dichalcogenides (WS2, WTe2) and Bulk Metal Contacts: Interface Chemistry and Band Alignment CM Smyth, R Addou, CL Hinkle, RM Wallace The Journal of Physical Chemistry C 124 (27), 14550-14563, 2020 | 23 | 2020 |
Christopher HinkleUniversity of Notre Dame, Electrical EngineeringVerified email at nd.edu