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Timothy (Tod) Dickson
Timothy (Tod) Dickson
Principal Research Scientist, IBM T.J. Watson Research Center
Verified email at us.ibm.com
Title
Cited by
Year
“A 10-Gb/s Compact Low-Power Serial I/O with DFE-IIR Equalization in 65-nm CMOS,” Deemed Best 2009 JSSC Paper
JFB Friedman, TO Dickson, Y Liu, B Kim
IEEE Solid-State Circuits Magazine, 55, 2011
2011
2.5 D and 3D technology challenges and test vehicle demonstrations
JU Knickerbocker, PS Andry, E Colgan, B Dang, T Dickson, X Gu, ...
2012 IEEE 62nd Electronic Components and Technology Conference, 1068-1076, 2012
1202012
30-100-GHz inductors and transformers for millimeter-wave (Bi) CMOS integrated circuits
S Voinigescu, TO Dickson, MA LaCroix, S Boret, D Gloria, R Beerkens
IEEE, 2005
2005
30-100-GHz inductors and transformers for millimeter-wave (Bi) CMOS integrated circuits
TO Dickson, MA LaCroix, S Boret, D Gloria, R Beerkens, SP Voinigescu
IEEE transactions on microwave theory and techniques 53 (1), 123-133, 2005
2562005
4-level pulse amplitude modulation transmitter architectures utilizing quadrature clock phases
TO Dickson, KIM Bongjin
US Patent 9,876,667, 2018
12018
4-level pulse amplitude modulation transmitter architectures utilizing quadrature clock phases
TO Dickson, KIM Bongjin
US Patent 10,171,281, 2019
52019
4-level pulse amplitude modulation transmitter architectures utilizing quadrature clock phases
TO Dickson, KIM Bongjin
US Patent 9,674,025, 2017
282017
6.5 A 1.8 pJ/b 56Gb/s PAM-4 transmitter with fractionally spaced FFE in 14nm CMOS
TO Dickson, HA Ainspan, M Meghelli
2017 IEEE International Solid-State Circuits Conference (ISSCC), 118-119, 2017
452017
A 1.4 pJ/bit, power-scalable 16× 12 Gb/s source-synchronous I/O with DFE receiver in 32 nm SOI CMOS technology
TO Dickson, Y Liu, SV Rylov, A Agrawal, S Kim, PH Hsieh, JF Bulzacchelli, ...
IEEE Journal of Solid-State Circuits 50 (8), 1917-1931, 2015
472015
A 1.5 V 20/30 Gb/s CMOS backplane driver with digital pre-emphasis
P Westergaard, TO Dickson, SP Voinigescu
Proceedings of the IEEE 2004 Custom Integrated Circuits Conference (IEEE Cat …, 2004
372004
A 1.8 pJ/bit Source-Synchronous Parallel Interface in 32 nm SOI CMOS with Receiver Redundancy for Link Recalibration
TO Dickson, Y Liu, A Agrawal, JF Bulzacchelli, HA Ainspan, ...
IEEE Journal of Solid-State Circuits 51 (8), 1744-1755, 2016
412016
A 10Gb/s Compact Low-Power Serial I/O with DFE-IIR Equalization in 65nm CMOS
Y Liu, B Kim, TO Dickson, JF Bulzacchelli, DJ Friedman
International Solid State Circuits Conference, 2009
1842009
A 12-Gb/s 11-mW half-rate sampled 5-tap decision feedback equalizer with current-integrating summers in 45-nm SOI CMOS technology
TO Dickson, JF Bulzacchelli, DJ Friedman
IEEE Journal of Solid-State Circuits 44 (4), 1298-1305, 2009
1262009
A 128-Gb/s 1.3-pJ/b PAM-4 transmitter with reconfigurable 3-tap FFE in 14-nm CMOS
Z Toprak-Deniz, JE Proesel, JF Bulzacchelli, HA Ainspan, TO Dickson, ...
IEEE Journal of Solid-State Circuits 55 (1), 19-26, 2019
662019
A 19-Gb/s serial link receiver with both 4-tap FFE and 5-tap DFE functions in 45-nm SOI CMOS
A Agrawal, JF Bulzacchelli, TO Dickson, Y Liu, JA Tierno, DJ Friedman
IEEE journal of solid-state circuits 47 (12), 3220-3231, 2012
1152012
A 2-GHz direct sampling delta-sigma tunable receiver with 40-GHz sampling clock and on-chip PLL
T Chalvatzis, TO Dickson, SP Voinigescu
2007 IEEE Symposium on VLSI Circuits, 54-55, 2007
102007
A 2.5-V 45-Gb/s decision circuit using SiGe BiCMOS logic
S Voinigescu, TO Dickson, R Beerkens
IEEE, 2005
2005
A 2.5-V 45-Gb/s decision circuit using SiGe BiCMOS logic
TO Dickson, R Beerkens, SP Voinigescu
IEEE Journal of Solid-State Circuits 40 (4), 994-1003, 2005
792005
A 20-Gb/s, 0.66-pJ/bit serial receiver with 2-stage continuous-time linear equalizer and 1-tap decision feedback equalizer in 45nm SOI CMOS
JE Proesel, TO Dickson
2011 Symposium on VLSI Circuits-Digest of Technical Papers, 206-207, 2011
472011
A 32 Gb/s, 4.7 pJ/bit optical link with− 11.7 dBm sensitivity in 14-nm FinFET CMOS
JE Proesel, Z Toprak-Deniz, A Cevrero, I Ozkaya, S Kim, DM Kuchta, ...
IEEE Journal of Solid-State Circuits 53 (4), 1214-1226, 2017
682017
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