| A novel design of ferroelectric nanowire tunnel field effect transistors N Thoti, Y Li 2021 International Symposium on VLSI Technology, Systems and Applications …, 2021 | 1 | 2021 |
| Characteristic Variability and Random Telegraph Noise of Gate-All-Around Silicon Nanowire MOSFETs with Asymmetric Dual Spacer Induced by Single Charge Trap SR Kola, Y Li, N Thoti International Conference on Solid State Devices and Materials (SSDM), 633-634, 2019 | | 2019 |
| Characteristics of Gate-All-Around Silicon Nanowire and Nanosheet MOSFETs with Various Spacers SR Kola, N Thoti 2020 International Conference on Simulation of Semiconductor Processes and …, 2020 | 20 | 2020 |
| Comparative investigation of Si/Sio. 6Geo. 4/InAs 3D-fin-TFET for its optimized performance N Thoti, R Haritha, AK Kumar, AR Yadav, VN Rao 2018 4th International Conference on Devices, Circuits and Systems (ICDCS …, 2018 | | 2018 |
| DC and AC characteristics of Si/SiGe based vertically stacked complementary-tunneling FETs N Thoti, Y Li Nanotechnology 34 (50), 505208, 2023 | | 2023 |
| Design and exploration of vertically stacked complementary tunneling field-effect transistors N Thoti, Y Li Applied Physics Express 17 (1), 014001, 2023 | | 2023 |
| Design and Optimization of Multi-fin TFETs using TCAD Simulations N Thoti, B Lakshmi Second National Conference on Recent Developments in Electronics, 2017 | 1 | 2017 |
| Design and Simulation of Highly-Efficient Metal-Ferroelectric-Nanosheet Line-Tunnel FETs for Sub-5-nm Technology Nodes N Thoti, Y Li, SR Kola, S Samukawa International Conference on Solid State Devices and Materials (SSDM), 19-20, 2020 | | 2020 |
| Design of GAA nanosheet ferroelectric area tunneling FET and its significance with DC/RF characteristics including linearity analyses N Thoti, Y Li Nanoscale Research Letters 17 (1), 53, 2022 | 11 | 2022 |
| Device-simulation-based machine learning technique for the characteristic of line tunnel field-effect transistors C Akbar, Y Li, N Thoti IEEE Access 10, 53098-53107, 2022 | 2 | 2022 |
| Effects of a dual spacer on electrical characteristics and random telegraph noise of gate-all-around silicon nanowire p-type metal–oxide–semiconductor field-effect transistors SR Kola, Y Li, N Thoti Japanese Journal of Applied Physics 59 (SG), SGGA02, 2020 | 12 | 2020 |
| Effects of spacer and single-charge trap on voltage transfer characteristics of gate-all-around silicon nanowire CMOS devices and circuits SR Kola, Y Li, N Thoti 2020 IEEE 20th International Conference on Nanotechnology (IEEE-NANO), 217-220, 2020 | 17 | 2020 |
| Face Recognition System Using DCT Pyramid Method LH bramha, N Thoti National conference on Emerging Trends in Electronics and Communication …, 2012 | | 2012 |
| Gate‐all‐around nanowire vertical tunneling FETs by ferroelectric internal voltage amplification N Thoti, Y Li Nanotechnology 33 (5), 055201, 2021 | 9 | 2021 |
| High-Performance Metal-Ferroeletric-Semiconductor Nanosheet Line Tunneling Field Effect Transistors with Strained SiGe N Thoti, Y Li, SR Kola, S Samukawa 2020 International Conference on Simulation of Semiconductor Processes and …, 2020 | 8 | 2020 |
| Implementation of video steganography using hash function in LSB technique S Chitra, N Thoti International Journal of Engineering Research & Technology (IJERT) 2 (11 …, 2013 | 6* | 2013 |
| Influence of Fringing-Field on DC/AC Characteristics of Si₁₋ₓGeₓ Based Multi-Channel Tunnel FETs N Thoti, Y Li IEEE Access 8, 208658-208668, 2020 | 17 | 2020 |
| Investigation of optimized Si1-xGex 3D-fin-TFET by varying the fin height N Thoti, R Haritha, N Madineni 2018 International Conference on Recent Trends in Electrical, Control and …, 2018 | 2 | 2018 |
| Machine learning approach to predicting tunnel field-effect transistors C Akbar, N Thoti, Y Li 2021 International Symposium on VLSI Technology, Systems and Applications …, 2021 | 4 | 2021 |
| New proficient ferroelectric nanosheet line tunneling FETs with strained SiGe through scaled n-epitaxial layer N Thoti, Y Li, SR Kola, S Samukawa 2020 IEEE 20th International Conference on Nanotechnology (IEEE-NANO), 319-322, 2020 | 7 | 2020 |
Yiming LiDepartment of Electronics and Electrical Engineering, National Yang Ming Chiao Tung UniversityVerified email at nycu.edu.tw