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Mathieu Luisier
Mathieu Luisier
Verified email at iis.ee.ethz.ch
Title
Cited by
Year
2-D Materials for Ultrascaled Field-Effect Transistors: One Hundred Candidates under the Ab Initio Microscope
C Klinkert, A Szabo, C Stieger, D Campi, N Marzari, M Luisier
ACS Nano 14 (7), 8605-8615, 2020
762020
2-D Materials Modelling: from Transistors to Majorana Fermions
M Luisier, C Klinkert, Y Lee, D Campi, N Marzari
APS March Meeting Abstracts 2022, B32. 005, 2022
2022
2D simulation of gate currents in MOSFETs: Comparison between S-Device and the quantum mechanical simulator GreenSolver
A Schenk, MM Luisier
2008 International Conference on Simulation of Semiconductor Processes and …, 2008
22008
A computationally efficient non-parabolic bandstructure model for quantum transport simulations
A Ziegler, M Frey, L Smith, M Luisier
2015 International Conference on Simulation of Semiconductor Processes and …, 2015
42015
A data-centric approach to extreme-scale ab initio dissipative quantum transport simulations
AN Ziogas, T Ben-Nun, GI Fernández, T Schneider, M Luisier, T Hoefler
Proceedings of the International Conference for High Performance Computing …, 2019
572019
A Data-Centric Approach to Extreme-Scale Ab initio Dissipative Quantum Transport Simulations
A Nikolaos Ziogas, T Ben-Nun, G Indalecio Fernández, T Schneider, ...
arXiv e-prints, arXiv: 1912.10024, 2019
2019
A generalized Poisson solver for first-principles device simulations
MH Bani-Hashemian, S Brück, M Luisier, J VandeVondele
The Journal of chemical physics 144 (4), 2016
272016
A Green's Functions Simulator for Nanoscopic CNT-based Strain-Sensors
N Уetter, M Luisier
A Hybrid Mode-Space/Real-Space Scheme for DFT+ NEGF Device Simulations
F Ducry, MH Bani-Hashemian, M Luisier
2019 International Conference on Simulation of Semiconductor Processes and …, 2019
32019
A multi-level parallel simulation approach to electron transport in nano-scale transistors
M Luisier, G Klimeck
SC'08: Proceedings of the 2008 ACM/IEEE Conference on Supercomputing, 1-10, 2008
172008
A multiscale TCAD approach for the simulation of InP DHBTs and the extraction of their transit times
X Wen, C Mukherjee, C Raya, B Ardouin, M Deng, S Fregonese, ...
IEEE Transactions on Electron Devices 66 (12), 5084-5090, 2019
132019
A nano-electronics simulator for petascale computing: from NEMO to OMEN
H Bae, S Clark, B Haley, R Hoon, G Klimeck, S Lee, M Luisier, F Saied
82008
A Nonparabolic Bandstructure Model for Computationally Efficient Quantum Transport Simulations
A Ziegler, M Frey, L Smith, M Luisier
IEEE Transactions on Electron Devices 63 (5), 2050-2056, 2016
162016
A nonparabolicity model compared to tight-binding: The case of square silicon quantum wires
A Esposito, M Luisier, M Frey, A Schenk
Solid-state electronics 53 (3), 376-382, 2009
82009
A parallel implementation of electron-phonon scattering in nanoelectronic devices up to 95k cores
M Luisier
SC'10: Proceedings of the 2010 ACM/IEEE International Conference for High …, 2010
172010
A parallel sparse linear solver for nearest-neighbor tight-binding problems
M Luisier, G Klimeck, A Schenk, W Fichtner, TB Boykin
Euro-Par 2008–Parallel Processing: 14th International Euro-Par Conference …, 2008
112008
A study of alloyed nanowires from two perspectives: Approximate dispersion and transmission
G Klimeck, TB Boykin, M Luisier, N Kharche, A Schenk
AIP Conference Proceedings 893 (1), 711-712, 2007
12007
Ab initio calculation of mobility degradation caused by Si-vacancies in SiC/SiO2 channels
C Kälin, M Luisier
IWCN 2023, 2023
2023
Ab initio mobility of single-layer MoS2 and WS2: comparison to experiments and impact on the device characteristics
Y Lee, S Fiore, M Luisier
2019 IEEE International Electron Devices Meeting (IEDM), 24.4. 1-24.4. 4, 2019
242019
Ab initio modeling framework for Majorana transport in 2D materials: towards topological quantum computing
Y Lee, T Agarwal, M Luisier
2020 IEEE International Electron Devices Meeting (IEDM), 30.3. 1-30.3. 4, 2020
2020
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Articles 1–20