| " brightness enhancement" proposall which was about a year old at the time KF Canter, GR Brandes, TN Horsky, PH Lippel Atomic Physics with Positrons 169, 153, 1987 | 5* | 1987 |
| 4H-SiC substrate orientation effects on hydrogen etching and epitaxial growth BE Landini, GR Brandes Materials Science Forum 338, 185-188, 2000 | 1 | 2000 |
| 9.4-W/mm power density AlGaN-GaN HEMTs on free-standing GaN substrates KK Chu, PC Chao, MT Pizzella, R Actis, DE Meharry, KB Nichols, ... IEEE Electron Device Letters 25 (9), 596-598, 2004 | 133 | 2004 |
| A method for fabricating large-area, patterned, carbon nanotube field emitters X Xu, GR Brandes Applied Physics Letters 74 (17), 2549-2551, 1999 | 286 | 1999 |
| Acid etching for accurate determination of dislocation density in GaN X Xu, RP Vaudo, J Flynn, GR Brandes Journal of electronic materials 31 (5), 402-405, 2002 | 53 | 2002 |
| AlGaN/GaN Schottky diode hydrogen sensor performance at high temperatures with different catalytic metals J Song, W Lu, JS Flynn, GR Brandes Solid-state electronics 49 (8), 1330-1334, 2005 | 105 | 2005 |
| Amorphous silicon carbide thin film articles G Brandes, C Christos, X Xu US Patent App. 10/092,887, 2002 | 17 | 2002 |
| Amorphous silicon carbide thin film coating GR Brandes, CS Christos, X Xu US Patent 6,680,489, 2004 | 5 | 2004 |
| Analysis of the atomic geometries of the (101¯ 0) and (112¯ 0) surfaces of CdSe by low-energy-electron diffraction and low-energy-positron diffraction TN Horsky, GR Brandes, KF Canter, CB Duke, A Paton, DL Lessor, ... Physical Review B 46 (11), 7011, 1992 | 61 | 1992 |
| Apparatus and method for producing (Al, Ga, In) N material using an in-situ laser for parting this material RP Vaudo, GR Brandes, MA Tischler, MK Kelly | | 2018 |
| Atomic Physics with Positrons KF Canter, GR Brandes, TN Horsky, PH Lippel, AP Mills Jr Humberston JW and Armour EAG, eds, 1987 | 26 | 1987 |
| Background Impurity Reduction and Iron Doping of Gallium Nitride Wafers RP Vaudo, X Xu, AD Salant, JA Malcarne, EL Hutchins, GR Brandes MRS Online Proceedings Library (OPL) 743, 2002 | | 2002 |
| Barrier heights of Schottky contacts on strained AlGaN/GaN heterostructures: Determination and effect of metal work functions Z Lin, W Lu, J Lee, D Liu, JS Flynn, GR Brandes Applied Physics Letters 82 (24), 4364-4366, 2003 | 108 | 2003 |
| Brandeis second generation positron reemission microscope KF Canter, V Dharmavaram, AG Smirnov, SA Wesley, KH Wong, R Xie, ... AIP Conference Proceedings 303 (1), 385-390, 1994 | 1 | 1994 |
| Broadband light emitting device lamps for providing white light output G Brandes US Patent 8,022,388, 2011 | 24 | 2011 |
| Broadband light emitting device lamps for providing white light output G Brandes US Patent 8,598,565, 2013 | 11 | 2013 |
| Carbon fiber-based field emission devices X Xu, CP Beetz, GR Brandes, RW Boerstler, JW Steinbeck US Patent 5,872,422, 1999 | 153 | 1999 |
| Carbon fiber-based field emission devices X Xu, CP Beetz, GR Brandes, RW Boerstler, JW Steinbeck US Patent 5,973,444, 1999 | 223 | 1999 |
| Carbon nanotube-based vacuum microelectronic gated cathode X Xu, GR Brandes MRS Online Proceedings Library (OPL) 509, 1998 | 7 | 1998 |
| Characteristics of homoepitaxial 4H-SiC films grown on c-axis substrates offcut towards <11̄00> or <112̄0> BE Landini, GR Brandes Applied physics letters 74 (18), 2632-2634, 1999 | 29 | 1999 |
