| Ultrafast terahertz probes of transient conducting and insulating phases in an electron–hole gas RA Kaindl, MA Carnahan, D Hägele, R Lövenich, DS Chemla Nature 423 (6941), 734-738, 2003 | 528 | 2003 |
| Spin transport in GaAs D Hägele, M Oestreich, WW Rühle, N Nestle, K Eberl Applied physics letters 73 (11), 1580-1582, 1998 | 302 | 1998 |
| Spin injection into semiconductors M Oestreich, J Hübner, D Hägele, PJ Klar, W Heimbrodt, WW Rühle, ... Applied physics letters 74 (9), 1251-1253, 1999 | 285 | 1999 |
| Laser threshold reduction in a spintronic device J Rudolph, D Hägele, HM Gibbs, G Khitrova, M Oestreich Applied physics letters 82 (25), 4516-4518, 2003 | 239 | 2003 |
| Spin noise spectroscopy in GaAs M Oestreich, M Römer, RJ Haug, D Hägele Physical review letters 95 (21), 216603, 2005 | 234 | 2005 |
| Transient terahertz spectroscopy of excitons and unbound carriers in quasi-two-dimensional electron-hole gases RA Kaindl, D Hägele, MA Carnahan, DS Chemla Physical Review B—Condensed Matter and Materials Physics 79 (4), 045320, 2009 | 207 | 2009 |
| Anomalous Spin Dephasing in (110) GaAs Quantum Wells:<? format?> Anisotropy and Intersubband Effects S Döhrmann, D Hägele, J Rudolph, M Bichler, D Schuh, M Oestreich Physical review letters 93 (14), 147405, 2004 | 204 | 2004 |
| Room-temperature threshold reduction in vertical-cavity surface-emitting lasers by injection of spin-polarized electrons J Rudolph, S Döhrmann, D Hägele, M Oestreich, W Stolz Applied Physics Letters 87 (24), 2005 | 128 | 2005 |
| Optical orientation of electron spins in GaAs quantum wells S Pfalz, R Winkler, T Nowitzki, D Reuter, AD Wieck, D Hägele, ... Physical Review B—Condensed Matter and Materials Physics 71 (16), 165305, 2005 | 124 | 2005 |
| Spin injection, spin transport and spin coherence M Oestreich, M Bender, J Hübner, D Hägele, WW Rühle, T Hartmann, ... Semiconductor science and technology 17 (4), 285, 2002 | 92 | 2002 |
| Circular photogalvanic effect at inter-band excitation in semiconductor quantum wells VV Bel'kov, SD Ganichev, P Schneider, C Back, M Oestreich, J Rudolph, ... Solid state communications 128 (8), 283-286, 2003 | 79 | 2003 |
| Temperature dependence of electron spin relaxation in bulk GaN JH Buß, J Rudolph, F Natali, F Semond, D Hägele Physical Review B—Condensed Matter and Materials Physics 81 (15), 155216, 2010 | 77 | 2010 |
| Spintronics: Spin electronics and optoelectronics in semiconductors M Oestreich, J Hübner, D Hägele, M Bender, N Gerhardt, M Hofmann, ... Advances in Solid State Physics, 173-186, 2001 | 68 | 2001 |
| Temperature-dependent electron Landé factor and the interband matrix element of GaAs J Hübner, S Döhrmann, D Hägele, M Oestreich Physical Review B—Condensed Matter and Materials Physics 79 (19), 193307, 2009 | 62 | 2009 |
| Anisotropic electron spin relaxation in bulk GaN JH Buss, J Rudolph, F Natali, F Semond, D Hägele Applied Physics Letters 95 (19), 2009 | 48 | 2009 |
| Ultrafast spin noise spectroscopy S Starosielec, D Hägele Applied Physics Letters 93 (5), 2008 | 39 | 2008 |
| Discrete-time windows with minimal RMS bandwidth for given RMS temporal width S Starosielec, D Hägele Signal Processing 102, 240-246, 2014 | 37 | 2014 |
| Dyakonov-Perel electron spin relaxation in a wurtzite semiconductor: from the nondegenerate to the highly degenerate regime JH Buß, J Rudolph, S Starosielec, A Schaefer, F Semond, Y Cordier, ... Physical Review B—Condensed Matter and Materials Physics 84 (15), 153202, 2011 | 30 | 2011 |
| Long room-temperature electron spin lifetimes in highly doped cubic GaN JH Buß, J Rudolph, T Schupp, DJ As, K Lischka, D Hägele Applied Physics Letters 97 (6), 2010 | 30 | 2010 |
| Cooling dynamics of excitons in GaN D Hägele, R Zimmermann, M Oestreich, MR Hofmann, WW Rühle, ... Physical Review B 59 (12), R7797, 1999 | 30 | 1999 |
Robert A. KaindlDepartment of Physics and CXFEL Laboratory, Arizona State UniversityVerified email at asu.edu
