Articles with public access mandates - Dan Mihai BucaLearn more
Not available anywhere: 28
Epitaxial growth of highly compressively strained GeSn alloys up to 12.5% Sn
M Oehme, D Buca, K Kostecki, S Wirths, B Holländer, E Kasper, J Schulze
Journal of crystal growth 384, 71-76, 2013
Mandates: German Research Foundation
High-k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effect Transistors
S Wirths, D Stange, MA Pampillón, AT Tiedemann, G Mussler, A Fox, ...
ACS applied materials & interfaces 7 (1), 62-67, 2015
Mandates: European Commission, Government of Spain
Performance benchmarking of p-type In0.65Ga0.35As/GaAs0.4Sb0.6and Ge/Ge0.93Sn0.07hetero-junction tunnel FETs
R Pandey, C Schulte-Braucks, RN Sajjad, M Barth, RK Ghosh, B Grisafe, ...
2016 IEEE International Electron Devices Meeting (IEDM), 19.6. 1-19.6. 4, 2016
Mandates: US National Science Foundation, Federal Ministry of Education and Research …
Schottky barrier tuning via dopant segregation in NiGeSn-GeSn contacts
C Schulte-Braucks, E Hofmann, S Glass, N von den Driesch, G Mussler, ...
Journal of applied physics 121 (20), 2017
Mandates: Federal Ministry of Education and Research, Germany
Line tunneling dominating charge transport in SiGe/Si heterostructure TFETs
S Blaeser, S Glass, C Schulte-Braucks, K Narimani, N von den Driesch, ...
IEEE Transactions on Electron Devices 63 (11), 4173-4178, 2016
Mandates: European Commission
Epitaxy of Si-Ge-Sn-based heterostructures for CMOS-integratable light emitters
N von den Driesch, D Stange, D Rainko, U Breuer, G Capellini, ...
Solid-State Electronics 155, 139-143, 2019
Mandates: German Research Foundation, Federal Ministry of Education and Research, Germany
Vapor transport growth of MoS2 nucleated on SiO2 patterns and graphene flakes
T Stoica, M Stoica, M Duchamp, A Tiedemann, S Mantl, D Grützmacher, ...
Nano research 9, 3504-3514, 2016
Mandates: Helmholtz Association
Diameter scaling of vertical Ge gate-all-around nanowire pMOSFETs
M Liu, F Lentz, S Trellenkamp, JM Hartmann, J Knoch, D Grützmacher, ...
IEEE Transactions on Electron Devices 67 (7), 2988-2994, 2020
Mandates: Federal Ministry of Education and Research, Germany
Demonstration of higher electron mobility in Si nanowire MOSFETs by increasing the strain beyond 1.3%
GV Luong, L Knoll, S Blaeser, MJ Süess, H Sigg, A Schäfer, ...
Solid-State Electronics 108, 19-23, 2015
Mandates: European Commission
Advances in GeSn alloys for MIR applications
V Reboud, O Concepción, W Du, M El Kurdi, JM Hartmann, Z Ikonic, ...
Photonics and Nanostructures-Fundamentals and Applications, 101233, 2024
Mandates: European Commission
Examination of a new SiGe/Si heterostructure TFET concept based on vertical tunneling
S Glass, C Schulte-Braucks, L Kibkalo, U Breuer, JM Hartmann, D Buca, ...
2017 Fifth Berkeley Symposium on Energy Efficient Electronic Systems & Steep …, 2017
Mandates: European Commission, Federal Ministry of Education and Research, Germany
GeSn for nanoelectronic and optical applications
D Buca, S Wirths, D Stange, N von den Driesch, T Stoica, D Grützmacher, ...
EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and …, 2015
Mandates: European Commission
Reduced threshold microdisk lasers from GeSn/SiGeSn heterostructures
D Stange, N von den Driesch, T Zabel, F Armand-Pilon, B Marzban, ...
2017 IEEE 14th International Conference on Group IV Photonics (GFP), 15-16, 2017
Mandates: German Research Foundation, Federal Ministry of Education and Research, Germany
Experimental demonstration of planar SiGe on Si TFETs with counter doped pocket
S Blaeser, S Richter, S Wirths, S Trellenkamp, D Buca, QT Zhao, S Manti
EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and …, 2015
Mandates: European Commission
Vertical heterojunction Ge0. 92 Sn0. 08/Ge GAA nanowire pMOSFETs: Low SS of 67 mV/dec, small DIBL of 24 mV/V and highest gm, ext of 870 μS/μm
M Liu, V Schlykow, JM Hartmann, J Knoch, D Grützmacher, D Buca, ...
2020 IEEE Symposium on VLSI Technology, 1-2, 2020
Mandates: Federal Ministry of Education and Research, Germany
MBE-Grown Ge0.92Sn0.08 Diode on RPCVD-Grown Partially Relaxed Virtual Ge0.92Sn0.08 Substrate
D Schwarz, SC Schäfer, L Seidel, HS Funk, D Weißhaupt, M Oehme, ...
2021 44th International Convention on Information, Communication and …, 2021
Mandates: German Research Foundation, Federal Ministry of Education and Research, Germany
Epitaxy of direct bandgap group IV Si-Ge-Sn alloys towards heterostructure light emitters
N von den Driesch, D Stange, D Rainko, I Povstugar, U Breuer, Z Ikonic, ...
ECS Transactions 86 (7), 189, 2018
Mandates: German Research Foundation, Federal Ministry of Education and Research, Germany
Electrically pumped GeSn/SiGeSn micro-rings lasers on Si with minimum threshold current of 40 mA
T Liu, L Seidel, B Marzban, M Oehme, J Witzens, G Capellini, ...
2023 IEEE Silicon Photonics Conference (SiPhotonics), 1-2, 2023
Mandates: German Research Foundation, Federal Ministry of Education and Research, Germany
Electroluminescence of pin-Diodes Grown on a GeSn Buffer
L Seidel, S Schäfer, M Oehme, D Buca, G Capellini, J Schulze, D Schwarz
ESSCIRC 2022-IEEE 48th European Solid State Circuits Conference (ESSCIRC …, 2022
Mandates: German Research Foundation, Federal Ministry of Education and Research, Germany
Vertical GeSn/Ge Heterostructure Gate-All-Around Nanowire p-MOSFETs
Y Junk, M Liu, M Frauenrath, JM Hartmann, D Gruetzmacher, D Buca, ...
ECS Transactions 108 (5), 83, 2022
Mandates: Federal Ministry of Education and Research, Germany
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