Mechanism of yellow luminescence in GaN T Ogino, M Aoki Japanese Journal of Applied Physics 19 (12), 2395, 1980 | 890 | 1980 |
Oxidation of Ge (100) and Ge (111) surfaces: an UPS and XPS study K Prabhakaran, T Ogino Surface Science 325 (3), 263-271, 1995 | 544 | 1995 |
Distinctly different thermal decomposition pathways of ultrathin oxide layer on Ge and Si surfaces K Prabhakaran, F Maeda, Y Watanabe, T Ogino Applied Physics Letters 76 (16), 2244-2246, 2000 | 347 | 2000 |
Role of transition metal catalysts in single-walled carbon nanotube growth in chemical vapor deposition Y Homma, Y Kobayashi, T Ogino, D Takagi, R Ito, YJ Jung, PM Ajayan The Journal of Physical Chemistry B 107 (44), 12161-12164, 2003 | 321 | 2003 |
Mechanism of Selective Growth of Carbon Nanotubes on SiO2/Si Patterns YJ Jung, Wei, R Vajtai, PM Ajayan, Y Homma, K Prabhakaran, T Ogino Nano Letters 3 (4), 561-564, 2003 | 257 | 2003 |
Growth of suspended carbon nanotube networks on 100-nm-scale silicon pillars Y Homma, Y Kobayashi, T Ogino, T Yamashita Applied Physics Letters 81 (12), 2261-2263, 2002 | 218 | 2002 |
Single-walled carbon nanotube growth on silicon substrates using nanoparticle catalysts Y Homma, T Yamashita, P Finnie, M Tomita, T Ogino Japanese journal of applied physics 41 (1A), L89, 2002 | 162 | 2002 |
Thermal decomposition pathway of Ge and Si oxides: observation of a distinct difference K Prabhakaran, F Maeda, Y Watanabe, T Ogino Thin Solid Films 369 (1-2), 289-292, 2000 | 135 | 2000 |
Production of electrically conductive paper by adding carbon nanotubes T Oya, T Ogino Carbon 46 (1), 169-171, 2008 | 128 | 2008 |
Self-assembled Ge nanowires grown on Si (113) H Omi, T Ogino Applied physics letters 71 (15), 2163-2165, 1997 | 127 | 1997 |
An efficient method for cleaning Ge (100) surface K Prabhakarana, T Ogino, R Hull, JC Bean, LJ Peticolas Surface science 316 (1-2), L1031-L1033, 1994 | 108 | 1994 |
High-density, large-area single-walled carbon nanotube networks on nanoscale patterned substrates YJ Jung, Y Homma, T Ogino, Y Kobayashi, D Takagi, B Wei, R Vajtai, ... The Journal of Physical Chemistry B 107 (28), 6859-6864, 2003 | 100 | 2003 |
Sublimation of the Si (111) surface in ultrahigh vacuum Y Homma, H Hibino, T Ogino, N Aizawa Physical Review B 55 (16), R10237, 1997 | 92 | 1997 |
Self-organization of Ge islands on high-index Si substrates H Omi, T Ogino Physical Review B 59 (11), 7521, 1999 | 91 | 1999 |
Electronic structure of single-walled carbon nanotubes encapsulating potassium S Suzuki, F Maeda, Y Watanabe, T Ogino Physical Review B 67 (11), 115418, 2003 | 90 | 2003 |
Decay kinetics of two-dimensional islands and holes on Si (111) studied by low-energy electron microscopy H Hibino, CW Hu, T Ogino, IST Tsong Physical Review B 63 (24), 245402, 2001 | 79 | 2001 |
Alternative to the Shuttleworth formulation of solid surface stress DJ Bottomley, T Ogino Physical Review B 63 (16), 165412, 2001 | 79 | 2001 |
Ultra-large-scale step-free terraces formed at the bottom of craters on vicinal Si (111) surfaces Y Homma, N Aizawa, T Ogino Japanese journal of applied physics 35 (2B), L241, 1996 | 74 | 1996 |
Transient step bunching on a vicinal Si (111) surface H Hibino, T Ogino Physical review letters 72 (5), 657, 1994 | 74 | 1994 |
Dynamics of the silicon (111) surface phase transition JB Hannon, H Hibino, NC Bartelt, BS Swartzentruber, T Ogino, ... Nature 405 (6786), 552-554, 2000 | 69 | 2000 |