| Vertical Ferroelectric HfO2 FET based on 3-D NAND Architecture: Towards Dense Low-Power Memory K Florent, M Pesic, A Subirats, K Banerjee, S Lavizzari, A Arreghini, ... 2018 IEEE International Electron Devices Meeting (IEDM), 2.5. 1-2.5. 4, 2018 | 136 | 2018 |
| Understanding ferroelectric Al: HfO2 thin films with Si-based electrodes for 3D applications K Florent, S Lavizzari, M Popovici, L Di Piazza, U Celano, G Groeseneken, ... Journal of Applied Physics 121 (20), 2017 | 86 | 2017 |
| First demonstration of vertically stacked ferroelectric Al doped HfO2devices for NAND applications K Florent, S Lavizzari, L Di Piazza, M Popovici, E Vecchio, G Potoms, ... 2017 Symposium on VLSI Technology, T158-T159, 2017 | 75 | 2017 |
| Reliability Study of Ferroelectric Al:HfO2Thin Films for DRAM and NAND Applications K Florent, S Lavizzari, L Di Piazza, M Popovici, J Duan, G Groeseneken, ... IEEE Transactions on Electron Devices 64 (10), 4091-4098, 2017 | 74 | 2017 |
| Investigation of the endurance of FE-HfO2 devices by means of TDDB studies K Florent, A Subirats, S Lavizzari, R Degraeve, U Celano, B Kaczer, ... 2018 IEEE International Reliability Physics Symposium (IRPS), 6D. 3-1-6D. 3-7, 2018 | 37 | 2018 |
| Vertical ferroelectric HfO K Florent, M Pesic, A Subirats, K Banerjee, S Lavizzari, A Arreghini IEDM Tech. Dig 2, 1-2.5, 2017 | 28 | 2017 |
| The flexoelectric effect in Al-doped hafnium oxide U Celano, M Popovici, K Florent, S Lavizzari, P Favia, K Paulussen, ... Nanoscale 10 (18), 8471-8476, 2018 | 24 | 2018 |
| New Insights into the Imprint Effect in FE-HfO2 and its Recovery Y Higashi, K Florent, A Subirats, B Kaczer, L Di Piazza, S Clima, N Ronchi, ... 2019 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2019 | 21 | 2019 |
| Thermal Stability of Copper–Nickel and Copper–Nickel Silicide Contacts for Crystalline Silicon AS Kale, W Nemeth, CL Perkins, D Young, A Marshall, K Florent, ... ACS Applied Energy Materials 1 (6), 2841-2848, 2018 | 20 | 2018 |
| Ferroelectricity in Si-doped hafnia: probing challenges in absence of screening charges U Celano, A Gomez, P Piedimonte, S Neumayer, L Collins, M Popovici, ... Nanomaterials 10 (8), 1576, 2020 | 19 | 2020 |
| First-Principles Perspective on Poling Mechanisms and Ferroelectric/Antiferroelectric Behavior of Hf1-xZrxO2 for FEFET Applications S Clima, SRC McMitchell, K Florent, L Nyns, M Popovici, N Ronchi, ... 2018 IEEE International Electron Devices Meeting (IEDM), 16.5. 1-16.5. 4, 2018 | 19 | 2018 |
| First demonstration of vertically stacked ferroelectric Al doped HfO K Florent, S Lavizzari, L Di Piazza, M Popovici, E Vecchio, G Potoms Proc. Symp. VLSI Technol, T158-T159, 0 | 13 | |
| Study of Nickel Silicide as a Copper Diffusion Barrier in Monocrystalline Silicon Solar Cells A Kale, E Beese, T Saenz, E Warren, W Nemeth, D Young, A Marshall, ... MRS Spring Meeting, 2016 | 12 | 2016 |
| Nickel silicide metallization for passivated tunneling contacts for silicon solar cells A Marshall, K Florent, A Tapriya, BG Lee, SK Kurinec, DL Young 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 2479-2482, 2016 | 8 | 2016 |
| Layered structure of MoS2 investigated using electron energy loss spectroscopy D MacMahon, A Brothers, K Florent, S Kurinec Materials Letters 161, 96-99, 2015 | 8 | 2015 |
| Ferroelectric HfO2 for emerging ferroelectric semiconductor devices K Florent Rochester Institute of Technology, 2015 | 8 | 2015 |
| 2018 IEEE Int. Electron Devices Meeting (IEDM) K Florent, M Pesic, A Subirats, K Banerjee, S Lavizzari, A Arreghini, ... IEEE, 2018 | 5 | 2018 |
| From planar to vertical capacitors: A step towards ferroelectric V-FeFET integration K Florent, S Lavizzari, L Di Piazza, M Popovici, G Potoms, T Raymaekers, ... 2017 47th European Solid-State Device Research Conference (ESSDERC), 164-167, 2017 | 4 | 2017 |
| 4F2 Stackable Polysilicon Channel Access Device for Ultra-Dense NVDRAM A Liao, M Jerry, K Karda, M Hollander, P Sharma, R Ge, T Zhao, ... 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2024 | 1 | 2024 |
| Impact of top and bottom conductive lyers on electrical and material properties of ferroelectric aluminum doped HfO2 K Florent, MI Popovici, S Lavizzari, L Di Piazza, G Groeseneken, ... | 1 | 2016 |
Simone LavizzariSonyVerified email at sony.com