Room temperature lasing in GeSn microdisks enabled by strain engineering D Buca, A Bjelajac, D Spirito, O Concepción, M Gromovyi, E Sakat, ...
Advanced Optical Materials 10 (22), 2201024, 2022
39 2022 Chemically driven isothermal closed space vapor transport of MoO 2: thin films, flakes and in situ tellurization O de Melo, L García-Pelayo, Y González, O Concepción, M Manso-Silván, ...
Journal of Materials Chemistry C 6 (25), 6799-6807, 2018
25 2018 Controlling the Epitaxial Growth of Bi2 Te3 , BiTe, and Bi4 Te3 Pure Phases by Physical Vapor Transport O Concepcion, M Galván-Arellano, V Torres-Costa, A Climent-Font, ...
Inorganic Chemistry 57 (16), 10090-10099, 2018
17 2018 Si–Ge–Sn alloys grown by chemical vapour deposition: a versatile material for photonics, electronics, and thermoelectrics D Grützmacher, O Concepción, QT Zhao, D Buca
Applied Physics A 129 (3), 235, 2023
14 2023 Substrate influence on preferential orientation of Bi2Te3 layers grown by physical vapor transport using elemental Bi and Te sources OC Díaz, O de Melo Pereira, AE Echavarría
Materials Chemistry and Physics 198, 341-345, 2017
13 2017 The versatile family of molybdenum oxides: synthesis, properties, and recent applications O Concepcion, O de Melo
Journal of Physics: Condensed Matter 35 (14), 143002, 2023
8 2023 Advances in GeSn alloys for MIR applications V Reboud, O Concepción, W Du, M El Kurdi, JM Hartmann, Z Ikonic, ...
Photonics and Nanostructures-Fundamentals and Applications, 101233, 2024
7 2024 Texture analysis and epitaxial relationships in Bi2Te3 thin film grown by physical vapor transport on silicon substrates O Concepción, A Tavira, J Roque, O de Melo, A Escobosa
Applied Surface Science 464, 280-286, 2019
7 2019 Isothermal Heteroepitaxy of Ge1–x Snx Structures for Electronic and Photonic Applications O Concepción, NB Søgaard, JH Bae, Y Yamamoto, AT Tiedemann, ...
ACS applied electronic materials 5 (4), 2268-2275, 2023
6 2023 Interfacial strain defines the self-organization of epitaxial MoO2 flakes and porous films on sapphire: experiments and modelling O De Melo, V Torres-Costa, Y González, A Ruediger, C De Melo, ...
Applied Surface Science 514, 145875, 2020
6 2020 Local Alloy Order in a Epitaxial Layer AA Corley-Wiciak, S Chen, O Concepción, MH Zoellner, D Grützmacher, ...
Physical Review Applied 20 (2), 024021, 2023
5 2023 Nanosecond laser annealing of pseudomorphic GeSn layers: Impact of Sn content M Frauenrath, PA Alba, O Concepción, JH Bae, N Gauthier, E Nolot, ...
Materials Science in Semiconductor Processing 163, 107549, 2023
4 2023 The growth of Bi2Te3 topological insulator films: Physical vapor transport vs molecular beam epitaxy O Concepción, VM Pereira, A Choa, SG Altendorf, A Escobosa, O de Melo
Materials Science in Semiconductor Processing 101, 61-66, 2019
4 2019 Room Temperature Lattice Thermal Conductivity of GeSn Alloys O Concepción, J Tiscareño-Ramírez, AA Chimienti, T Classen, ...
ACS applied energy materials, 2024
2 2024 Enhancement of the Surface Morphology of (Bi0.4 Sb0.6 )2 Te3 Thin Films by In Situ Thermal Annealing L Mulder, H van de Glind, A Brinkman, O Concepción
Nanomaterials 13 (4), 763, 2023
2 2023 Advances in In-situ Boron and Phosphorous Doping of SiGeSn M Frauenrath, L Casiez, OC Díaz, N Coudurier, N Gauthier, SM N'hari, ...
ECS Transactions 109 (4), 3, 2022
2 2022 Thickness-Dependent Sign Change of the Magnetoresistance in VTe2 Thin Films O Concepción, L Mulder, DH Wielens, A Brinkman
Solids 3 (3), 500-507, 2022
2 2022 Revisiting the van der Waals Epitaxy in the Case of (Bi0.4 Sb0.6 )2 Te3 Thin Films on Dissimilar Substrates L Mulder, DH Wielens, YA Birkhölzer, A Brinkman, O Concepción
Nanomaterials 12 (11), 1790, 2022
2 2022 Vapor Phase Growth of High-Quality Bi-Te Compounds Using Elemental Bi and Te Sources: A Comparison Between High Vacuum and Atmospheric Pressure O Concepción, A Escobosa, O de Melo
Journal of Electronic Materials 47, 4277-4281, 2018
2 2018 Physical vapor transport of Bi2Te3 using elemental Bi and Te sources O Concepción, O Vazquez, O de Melo, A Escobosa
2015 IEEE International Autumn Meeting on Power, Electronics and Computing …, 2015
2 2015