Review of electrical characterization of ultra-shallow junctions with micro four-point probes DH Petersen, O Hansen, TM Hansen, P Bøggild, R Lin, D Kjær, ... Journal of Vacuum Science & Technology B 28 (1), C1C27-C1C33, 2010 | 66 | 2010 |
Experimental studies of dose retention and activation in fin field-effect-transistor-based structures J Mody, R Duffy, P Eyben, J Goossens, A Moussa, W Polspoel, ... Journal of Vacuum Science & Technology B 28 (1), C1H5-C1H13, 2010 | 58 | 2010 |
High depth resolution analysis of Si/SiGe multilayers with the atom probe S Koelling, M Gilbert, J Goossens, A Hikavyy, O Richard, W Vandervorst Applied Physics Letters 95 (14), 2009 | 47 | 2009 |
Shear properties of glycerol by interface wave laser ultrasonics C Glorieux, K Van de Rostyne, J Goossens, G Shkerdin, W Lauriks, ... Journal of applied physics 99 (1), 2006 | 35 | 2006 |
Surface acoustic wave depth profiling of a functionally graded material J Goossens, P Leclaire, X Xu, C Glorieux, L Martinez, A Sola, C Siligardi, ... Journal of Applied Physics 102 (5), 2007 | 31 | 2007 |
On the analysis of the activation mechanisms of sub-melt laser anneals T Clarysse, J Bogdanowicz, J Goossens, A Moussa, E Rosseel, ... Materials Science and Engineering: B 154, 24-30, 2008 | 30 | 2008 |
Laser-based surface acoustic wave dispersion spectroscopy for extraction of thicknesses, depth, and elastic parameters of a subsurface layer: Feasibility study on intermetallic … R Salenbien, R Côte, J Goossens, P Limaye, R Labie, C Glorieux Journal of Applied Physics 109 (9), 2011 | 29 | 2011 |
Effect of loading a plate with different liquids on the propagation of lamb-like waves studied by laser ultrasonics X Xu, J Goossens, G Shkerdin, C Glorieux IEEE transactions on ultrasonics, ferroelectrics, and frequency control 55 …, 2008 | 20 | 2008 |
Use of p-and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology ND Nguyen, E Rosseel, S Takeuchi, JL Everaert, L Yang, J Goossens, ... Thin Solid Films 518 (6), S48-S52, 2010 | 19 | 2010 |
Shallow boron implantations in Ge and the role of the pre-amorphization depth E Simoen, G Brouwers, A Satta, ML David, F Pailloux, B Parmentier, ... Materials science in semiconductor processing 11 (5-6), 368-371, 2008 | 12 | 2008 |
Evolution of elastic and thermal properties during TMOS-gel formation determined by ringing bottle acoustic resonance spectroscopy, impulsive stimulated scattering … X Xu, JJAF Cuautle, M Kouyate, NB Roozen, J Goossens, P Menon, ... Journal of Physics D: Applied Physics 49 (8), 085502, 2016 | 10 | 2016 |
3D Gabor analysis of transient waves propagating along an AT cut quartz disk J Goossens, C Glorieux, N Wilkie-Chancellier, CO Ehssein, S Serfaty ultrasonics 44, e1173-e1177, 2006 | 10 | 2006 |
Advanced 2D/3D simulations for laser annealed device using an atomistic kinetic Monte Carlo approach and Scanning Spreading Resistance Microscopy (SSRM) T Noda, P Eyben, W Vandervorst, C Vrancken, E Rosseel, C Ortolland, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 9 | 2008 |
High precision micro-scale Hall effect characterization method using in-line micro four-point probes DH Petersen, O Hansen, R Lin, PF Nielsen, T Clarysse, J Goossens, ... 2008 16th IEEE International Conference on Advanced Thermal Processing of …, 2008 | 9 | 2008 |
Micro-uniformity during laser anneal: metrology and physics W Vandervorst, E Rosseel, R Lin, DH Petersen, T Clarysse, J Goossens, ... MRS Online Proceedings Library (OPL) 1070, 1070-E01-10, 2008 | 9 | 2008 |
Study of the bending modes in circular quartz resonators P Leclaire, J Goossens, L Martinez, N Wilkie-Chancelier, S Serfaty, ... ieee transactions on ultrasonics, ferroelectrics, and frequency control 53 …, 2006 | 9 | 2006 |
Quantitative depth profiling of SiGe‐multilayers with the Atom Probe S Koelling, M Gilbert, J Goossens, A Hikavyy, O Richard, W Vandervorst Surface and interface analysis 43 (1‐2), 163-166, 2011 | 8 | 2011 |
Accurate carrier profiling of n-type GaAs junctions T Clarysse, G Brammertz, D Vanhaeren, P Eyben, J Goossens, ... Materials science in semiconductor processing 11 (5-6), 259-266, 2008 | 8 | 2008 |
Basic Aspects of the Formation and Activation of Boron Junctions Using Plasma Immersion Ion Implantation. G Zschätzsch, W Vandervorst, T Hoffmann, J Goossens, JL Everaert, ... AIP Conference Proceedings 1066 (1), 461-464, 2008 | 7 | 2008 |
Proceedings of the 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2008 DH Petersen, O Hansen, R Lin, PF Nielsen, T Clarysse, J Goossens, ... Proceedings of the 16th IEEE International Conference on Advanced Thermal …, 2008 | 7 | 2008 |