Articles with public access mandates - Frederic AllibertLearn more
Not available anywhere: 6
Characterization of fully silicided source/drain SOI UTBB nMOSFETs at cryogenic temperatures
Y Han, F Xi, F Allibert, I Radu, S Prucnal, JH Bae, S Hoffmann-Eifert, ...
Solid-State Electronics 192, 108263, 2022
Mandates: Chinese Academy of Sciences, German Research Foundation
Impact of the Backgate on the Performance of SOI UTBB nMOSFETs at Cryogenic Temperatures
Y Han, F Xi, F Allibert, I Radu, S Prucnal, JH Bae, S Hoffmann-Eifert, ...
2021 Joint International EUROSOI Workshop and International Conference on …, 2021
Mandates: German Research Foundation
SmartSiC™ for Manufacturing of SiC Power Devices
N Daval, A Drouin, H Biard, L Viravaux, D Radisson, S Rouchier, ...
2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM …, 2022
Mandates: European Commission
SmartSiC™ 150 & 200mm engineered substrate: increasing SiC power device current density up to 30%
E Guiot, F Allibert, J Leib, T Becker, O Rusch, A Drouin, ...
PCIM Europe 2024; International Exhibition and Conference for Power …, 2024
Mandates: European Commission
SiC engineered substrate: increasing SiC MOSFETs current density from device to module level
E Guiot, F Allibert, J Leib, T Becker, A Drouin, W Schwarzenbach
2024 IEEE Applied Power Electronics Conference and Exposition (APEC), 210-214, 2024
Mandates: European Commission
Improved Power Cycling Reliability through the use of SmartSiC TM) Engineered Substrate for Power Devices
E Guiot, F Allibert, J Leib, T Becker, T Erlbacher
PCIM Europe 2023; International Exhibition and Conference for Power …, 2023
Mandates: European Commission
Available somewhere: 7
Steep Switching Si Nanowire p-FETs With Dopant Segregated Silicide Source/Drain at Cryogenic Temperature
Y Han, J Sun, B Richstein, F Allibert, I Radu, JH Bae, D Grützmacher, ...
IEEE Electron Device Letters 43 (8), 1187-1190, 2022
Mandates: German Research Foundation
On the effective mobility extraction by point-contact techniques on silicon-on-insulator substrates
C Fernandez, N Rodriguez, C Marquez, A Ohata, F Allibert
Journal of Applied Physics 117 (3), 035707, 2015
Mandates: Government of Spain
In-Situ Characterization of Bias Instability in Bare SOI Wafers by Pseudo-MOSFET Technique
C Marquez, N Rodriguez, C Fernandez, A Ohata, F Allibert, ...
IEEE, 2014
Mandates: Government of Spain
PN Junctions Interface Passivation in 22 nm FDSOI for Low-Loss Passives
L Nyssens, M Rack, M Nabet, C Schwan, Z Zhao, S Lehmann, ...
2022 24th International Microwave and Radar Conference (MIKON), 1-4, 2022
Mandates: National Fund for Scientific Research, Belgium, European Commission
Proven Power Cycling Reliability of Ohmic Annealing Free SiC Power Device through the Use of SmartSiCTM Substrate
E Guiot, F Allibert, J Leib, T Becker, W Schwarzenbach, C Hellinger, ...
Materials Science Forum 1092, 201-207, 2023
Mandates: European Commission
High-resistivity with PN interface passivation in 22 nm FD-SOI technology for low-loss passives at RF and millimeter-wave frequencies
L Nyssens, M Rack, M Nabet, C Schwan, Z Zhao, S Lehmann, ...
Solid-State Electronics 205, 108656, 2023
Mandates: National Fund for Scientific Research, Belgium, European Commission
Impact of substrate resistivity on spiral inductors at mm-wave frequencies
L Nyssens, M Rack, C Schwan, Z Zhao, S Lehmann, T Hermann, F Allibert, ...
Solid-State Electronics 194, 108377, 2022
Mandates: National Fund for Scientific Research, Belgium, European Commission
Publication and funding information is determined automatically by a computer program