| Improved strain precision with high spatial resolution using nanobeam precession electron diffraction JL Rouviere, A Béché, Y Martin, T Denneulin, D Cooper Applied Physics Letters 103 (24), 2013 | 142 | 2013 |
| Strain mapping of semiconductor specimens with nm-scale resolution in a transmission electron microscope D Cooper, T Denneulin, N Bernier, A Béché, JL Rouvière Micron 80, 145-165, 2016 | 134 | 2016 |
| Advanced GeSn/SiGeSn group IV heterostructure lasers N von den Driesch, D Stange, D Rainko, I Povstugar, P Zaumseil, ... Advanced science 5 (6), 1700955, 2018 | 84 | 2018 |
| Direct observation of altermagnetic band splitting in CrSb thin films S Reimers, L Odenbreit, L Šmejkal, VN Strocov, P Constantinou, ... Nature Communications 15 (1), 2116, 2024 | 59 | 2024 |
| Room-temperature skyrmions at zero field in exchange-biased ultrathin films KG Rana, A Finco, F Fabre, S Chouaieb, A Haykal, LD Buda-Prejbeanu, ... Physical review applied 13 (4), 044079, 2020 | 51 | 2020 |
| Excitons in InGaAs quantum dots without electron wetting layer states MC Löbl, S Scholz, I Söllner, J Ritzmann, T Denneulin, A Kovács, ... Communications Physics 2 (1), 93, 2019 | 46 | 2019 |
| Temperature-independent giant dielectric response in transitional BaTiO3 thin films AS Everhardt, T Denneulin, A Grünebohm, YT Shao, P Ondrejkovic, ... Applied physics reviews 7 (1), 2020 | 45 | 2020 |
| Skyrmionic spin structures in layered Fe5GeTe2 up to room temperature M Schmitt, T Denneulin, A Kovács, TG Saunderson, P Rüßmann, ... Communications Physics 5 (1), 254, 2022 | 41 | 2022 |
| Control of structure and spin texture in the van der Waals layered magnet CrSBr J Klein, T Pham, JD Thomsen, JB Curtis, T Denneulin, M Lorke, M Florian, ... Nature Communications 13 (1), 5420, 2022 | 39 | 2022 |
| Readout of an antiferromagnetic spintronics system by strong exchange coupling of Mn2Au and Permalloy SP Bommanaboyena, D Backes, LSI Veiga, SS Dhesi, YR Niu, B Sarpi, ... Nature Communications 12, 6539, 2021 | 36 | 2021 |
| Characterization and modeling of structural properties of SiGe/Si superlattices upon annealing M Py, JP Barnes, P Rivallin, A Pakfar, T Denneulin, D Cooper, ... Journal of Applied Physics 110 (4), 2011 | 27 | 2011 |
| Electron microscopy by specimen design: application to strain measurements N Cherkashin, T Denneulin, MJ Hÿtch Scientific reports 7 (1), 12394, 2017 | 25 | 2017 |
| Differential phase-contrast dark-field electron holography for strain mapping T Denneulin, F Houdellier, M Hÿtch Ultramicroscopy 160, 98-109, 2016 | 23 | 2016 |
| Ultrathin (5 nm) SiGe-On-Insulator with high compressive strain (− 2 GPa): From fabrication (Ge enrichment process) to in-depth characterizations F Glowacki, C Le Royer, Y Morand, JM Pédini, T Denneulin, D Cooper, ... Solid-state electronics 97, 82-87, 2014 | 23 | 2014 |
| Strain mapping with nm-scale resolution for the silicon-on-insulator generation of semiconductor devices by advanced electron microscopy D Cooper, T Denneulin, JP Barnes, JM Hartmann, L Hutin, C Le Royer, ... Journal of Applied Physics 112 (12), 2012 | 23 | 2012 |
| Strong bulk spin–orbit torques quantified in the van der Waals ferromagnet Fe3GeTe2 F Martin, K Lee, M Schmitt, A Liedtke, A Shahee, HT Simensen, T Scholz, ... Materials Research Letters 11 (1), 84-89, 2023 | 21 | 2023 |
| Microstructural insights into the coercivity enhancement of grain-boundary-diffusion-processed Tb-treated Nd-Fe-B sintered magnets beyond the core-shell formation mechanism KŽ Soderžnik, KŽ Rožman, M Komelj, A Kovács, P Diehle, T Denneulin, ... Journal of Alloys and Compounds 864, 158915, 2021 | 21 | 2021 |
| Room-temperature yellow-orange (In, Ga, Al) P–GaP laser diodes grown on (n11) GaAs substrates NN Ledentsov, VA Shchukin, YM Shernyakov, MM Kulagina, AS Payusov, ... Optics express 26 (11), 13985-13994, 2018 | 21 | 2018 |
| Current-driven writing process in antiferromagnetic Mn2Au for memory applications S Reimers, Y Lytvynenko, YR Niu, E Golias, B Sarpi, LSI Veiga, ... Nature Nommunications 14 (1), 1861, 2023 | 18 | 2023 |
| The addition of strain in uniaxially strained transistors by both SiN contact etch stop layers and recessed SiGe sources and drains T Denneulin, D Cooper, JM Hartmann, JL Rouviere Journal of Applied Physics 112 (9), 2012 | 16 | 2012 |