| Optimum semiconductors for high-power electronics K Shenai, RS Scott, BJ Baliga IEEE transactions on Electron Devices 36 (9), 1811-1823, 1989 | 880 | 1989 |
| Performance evaluation of high-power wide band-gap semiconductor rectifiers M Trivedi, K Shenai Journal of Applied Physics 85 (9), 6889-6897, 1999 | 239 | 1999 |
| Technique and Architecture for Cognitive Coordination of Resources in a Distributed Network S Mukhopadhyay, K Shenai, RK Roy, N Jack US Patent App. 12/040,553, 2009 | 142 | 2009 |
| DC-DC converter with current control K Shenai, S Abedinpour US Patent App. 10/289,115, 2003 | 125 | 2003 |
| Future prospects of widebandgap (WBG) semiconductor power switching devices K Shenai IEEE Transactions on Electron Devices 62 (2), 248-257, 2014 | 120 | 2014 |
| Dynamics of power MOSFET switching under unclamped inductive loading conditions K Fischer, K Shenai IEEE Transactions on electron devices 43 (6), 1007-1015, 1996 | 113 | 1996 |
| Smart DC micro-grid for efficient utilization of distributed renewable energy K Shenai, K Shah IEEE 2011 EnergyTech, 1-6, 2011 | 109 | 2011 |
| Failure mechanisms of IGBTs under short-circuit and clamped inductive switching stress M Trivedi, K Shenai IEEE transactions on power electronics 14 (1), 108-116, 1999 | 108 | 1999 |
| System for performing highly accurate surgery K Shenai, A Biyani, VK Goel, V Devabhaktuni, BR Lilly US Patent App. 13/102,153, 2011 | 106 | 2011 |
| Current status and emerging trends in wide bandgap (WBG) semiconductor power switching devices K Shenai, M Dudley, RF Davis ECS Journal of Solid State Science and Technology 2 (8), N3055, 2013 | 102 | 2013 |
| Scaling constraints imposed by self-heating in submicron SOI MOSFET's DA Dallmann, K Shenai IEEE Transactions on Electron Devices 42 (3), 489-496, 1995 | 95 | 1995 |
| Optimized trench MOSFET technologies for power devices K Shenai IEEE Transactions on Electron Devices 39 (6), 1435-1443, 1992 | 93 | 1992 |
| Optimally scaled low-voltage vertical power MOSFETs for high-frequency power conversion K Shenai IEEE transactions on electron devices 37 (4), 1141-1153, 1990 | 87 | 1990 |
| Modeling and characterization of an 80 V silicon LDMOSFET for emerging RFIC applications P Perugupalli, M Trivedi, K Shenai, SK Leong IEEE Transactions on Electron Devices 45 (7), 1468-1478, 1998 | 86 | 1998 |
| Simple and accurate circuit simulation model for SiC power MOSFETs AP Arribas, F Shang, M Krishnamurthy, K Shenai IEEE Transactions on Electron Devices 62 (2), 449-457, 2015 | 80 | 2015 |
| A circuit simulation model for high-frequency power MOSFETs K Shenai IEEE Transactions on Power Electronics 6 (3), 539-547, 1991 | 79 | 1991 |
| Efficiency evaluation of the modular multilevel converter based on Si and SiC switching devices for medium/high-voltage applications L Wu, J Qin, M Saeedifard, O Wasynczuk, K Shenai IEEE Transactions on Electron Devices 62 (2), 286-293, 2014 | 76 | 2014 |
| Engineered Schottky barrier diodes for the modification and control of Schottky barrier heights SJ Eglash, N Newman, S Pan, D Mo, K Shenai, WE Spicer, FA Ponce, ... Journal of applied physics 61 (11), 5159-5169, 1987 | 74 | 1987 |
| Investigation of the short-circuit performance of an IGBT M Trivedi, K Shenai IEEE Transactions on Electron Devices 45 (1), 313-320, 1998 | 70 | 1998 |
| DC microgrids and the virtues of local electricity R Singh, K Shenai IEEE Spectrum 6, 2014 | 69 | 2014 |
