| Comprehensive analysis of Si-doped (): Theory and experiments N Chand, T Henderson, J Klem, WT Masselink, R Fischer, YC Chang, ... Physical Review B 30 (8), 4481, 1984 | 516 | 1984 |
| Room temperature continuous wave InGaAsN quantum well vertical-cavity lasers emitting at 1.3 µm KD Choquette, JF Klem, AJ Fischer, O Blum, AA Allerman, IJ Fritz, ... Electronics Letters 36 (16), 1388-1390, 2000 | 387 | 2000 |
| Time-resolved Raman scattering in GaAs quantum wells DY Oberli, DR Wake, MV Klein, J Klem, T Henderson, H Morkoc Physical review letters 59 (6), 696, 1987 | 254 | 1987 |
| Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice BV Olson, EA Shaner, JK Kim, JF Klem, SD Hawkins, LM Murray, ... Applied Physics Letters 101 (9), 2012 | 248 | 2012 |
| Absorption coefficients and exciton oscillator strengths in AlGaAs-GaAs superlattices WT Masselink, PJ Pearah, J Klem, CK Peng, H Morkoc, GD Sanders, ... Physical Review B 32 (12), 8027, 1985 | 234 | 1985 |
| Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxy R Fischer, WT Masselink, J Klem, T Henderson, TC McGlinn, MV Klein, ... Journal of Applied Physics 58 (1), 374-381, 1985 | 232 | 1985 |
| InGaAsN/GaAs heterojunction for multi-junction solar cells SR Kurtz, AA Allerman, JF Klem, ED Jones US Patent 6,252,287, 2001 | 228 | 2001 |
| Phased-array sources based on nonlinear metamaterial nanocavities O Wolf, S Campione, A Benz, AP Ravikumar, S Liu, TS Luk, EA Kadlec, ... Nature communications 6 (1), 7667, 2015 | 164 | 2015 |
| Characterization of InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors AA Ketterson, WT Masselink, JS Gedymin, J Klem, CK Peng, WF Kopp, ... IEEE transactions on electron devices 33 (5), 564-571, 1986 | 158 | 1986 |
| Ordering in GaAs1−xSbx grown by molecular beam epitaxy YE Ihm, N Otsuka, J Klem, H Morkoc Applied physics letters 51 (24), 2013-2015, 1987 | 146 | 1987 |
| Incorporation rates of gallium and aluminum on GaAs during molecular beam epitaxy at high substrate temperatures R Fischer, J Klem, TJ Drummond, RE Thorne, W Kopp, H Morkoc, AY Cho Journal of Applied Physics 54 (5), 2508-2510, 1983 | 145 | 1983 |
| Interband-cascade infrared photodetectors with superlattice absorbers RQ Yang, Z Tian, Z Cai, JF Klem, MB Johnson, HC Liu Journal of Applied Physics 107 (5), 2010 | 133 | 2010 |
| Strong coupling in the sub-wavelength limit using metamaterial nanocavities A Benz, S Campione, S Liu, I Montano, JF Klem, A Allerman, JR Wendt, ... Nature communications 4 (1), 2882, 2013 | 128 | 2013 |
| Optical properties of GaAs on (100) Si using molecular beam epitaxy WT Masselink, T Henderson, J Klem, R Fischer, P Pearah, H Morkoc, ... Applied physics letters 45 (12), 1309-1311, 1984 | 123 | 1984 |
| Conductance modulation in double quantum wells due to magnetic field-induced anticrossing JA Simmons, SK Lyo, NE Harff, JF Klem Physical review letters 73 (16), 2256, 1994 | 121 | 1994 |
| Characteristics of GaAs/AlGaAs MODFETs grown directly on (100) silicon R Fischer, T Henderson, J Klem, WT Masselink, W Kopp, H Morkoc, ... Electronics Letters 20 (22), 945-947, 1984 | 120 | 1984 |
| Use of a superlattice to enhance the interface properties between two bulk heterolayers TJ Drummond, J Klem, D Arnold, R Fischer, RE Thorne, WG Lyons, ... Applied Physics Letters 42 (7), 615-617, 1983 | 118 | 1983 |
| OC-48 capable InGaAsN vertical cavity lasers AW Jackson, RL Naone, MJ Dalberth, JM Smith, KJ Malone, DW Kisker, ... Electronics Letters 37 (6), 355-356, 2001 | 117 | 2001 |
| Minority carrier diffusion and defects in InGaAsN grown by molecular beam epitaxy SR Kurtz, JF Klem, AA Allerman, RM Sieg, CH Seager, ED Jones Applied physics letters 80 (8), 1379-1381, 2002 | 114 | 2002 |
| Electron heating in a multiple-quantum-well structure below 1 K AKM Wennberg, SN Ytterboe, CM Gould, HM Bozler, J Klem, H Morkoc Physical Review B 34 (6), 4409, 1986 | 111 | 1986 |
