Characterization of AlGaN/GaN and AlGaN/AlN/GaN HEMTs in terms of mobility and subthreshold slope S Prasad, AK Dwivedi, A Islam Journal of Computational Electronics 15 (1), 172-180, 2016 | 32 | 2016 |
Characterization of AlGaN and GaN based HEMT with AlN interfacial spacer P Roy, S Jawanpuria, S Prasad, A Islam 2015 fifth international conference on communication systems and network …, 2015 | 17 | 2015 |
A study on power optimization techniques in psoc S Singha, AS Singh, S Prasad, A Alam 2019 International Conference on Communication and Signal Processing (ICCSP …, 2019 | 9 | 2019 |
Pulse width modulator based on second generation current conveyor A Srinivasulu, MSS Rukmini, S Musala, MP Ram, S Prasad 2014 International Conference on Devices, Circuits and Communications …, 2014 | 7 | 2014 |
Analysis of breakdown voltage of a field plated High Electron Mobility Transistor A Chitransh, S Moonka, A Priya, S Prasad, A Sengupta, A Islam 2017 Devices for Integrated Circuit (DevIC), 167-169, 2017 | 5 | 2017 |
Performance evaluation of CNFET based operational amplifier at technology node beyond 45-nm MA Kafeel, M Hasan, MS Alam, A Kumar, S Prasad, A Islam 2013 Annual IEEE India Conference (INDICON), 1-5, 2013 | 4 | 2013 |
Realization and optimization of CNFET based operational amplifier at 32-nm technology node A Kumar, S Prasad, A Islam Proceedings of International Conclave ON, 1-4, 2013 | 3 | 2013 |
High breakdown (958 V) low threshold GaN HEMT S Prasad, M Guduri, A Islam 2017 International Conference on Multimedia, Signal Processing and …, 2017 | 2 | 2017 |
Development of HEMT device with surface passivation for a low leakage current and steep subthreshold slope A Priya, S Moonka, A Chitransh, S Prasad, A Sengupta, A Islam 2017 Devices for Integrated Circuit (DevIC), 364-367, 2017 | 2 | 2017 |
Analysis of Al0.22Ga0.78As/In0.18Ga0.82As/GaAs Pseudomorphic HEMT device with higher conductivity S Moonka, A Priya, A Chitransh, S Prasad, A Sengupta, A Islam 2017 Devices for Integrated Circuit (DevIC), 360-363, 2017 | 2 | 2017 |
Impact of temperature variation on resonant frequency of active grounded inductor-based bandpass filter S Khanna, D Majumder, V Kumar, S Prasad, A Islam Indian Journal of Science and Technology 9 (33), 1-4, 2016 | 2 | 2016 |
Characterization of AlInN/GaN based HEMT for Radio Frequency Applications S Prasad, A Islam Micro and Nanosystems 15 (1), 55-64, 2023 | 1 | 2023 |
Comparative analysis and robustness study of logic styles PK Singh, R Raj, V Kumar, M Pandey, S Prasad, A Islam Microsystem Technologies 28 (12), 2807-2820, 2022 | 1 | 2022 |
Process and voltage variation-aware design and analysis of active grounded inductor-based bandpass filter V Kumar, R Mehra, D Majumder, S Khanna, S Prasad, A Islam Progress in Intelligent Computing Techniques: Theory, Practice, and …, 2018 | 1 | 2018 |
Study and Analysis of AlGaN/GaN-Based HEMT and MOSHEMT Check for updates S Firdoush, I Mishra, R Xalxo, SK Dubey, S Prasad, A Islam Energy Systems, Drives and Automations: Proceedings of ESDA 2021 1057, 239, 2023 | | 2023 |
Y-shaped double-gate high electron mobility transistor for radio frequency applications S Prasad, A Islam International Journal of Nanoparticles 14 (2-4), 181-201, 2022 | | 2022 |
Design of a 2.45 GHz Cascode Low Noise Amplifier with π Matching Technique S Kumar, S Saraiyan, A Saurabh, SK Dubey, S Prasad, A Islam International Conference on Energy Systems, Drives and Automations, 213-223, 2021 | | 2021 |
Threshold Voltage Extraction of 220nm FDSOI Device using Linear Extrapolation Method VK Reddy, M Guduri, NLD Reddy, P Dharani, S Prasad, A Islam Indian Journal of Science and Technology 9 (40), 1-4, 2016 | | 2016 |
Variation mitigation technique in SRAM cell using adaptive body bias S Kushwaha, S Prasad, A Islam 2012 International Conference on Communications, Devices and Intelligent …, 2012 | | 2012 |