Reduction of wavelength dependence of coupling characteristics using Si optical waveguide curved directional coupler H Morino, T Maruyama, K Iiyama Journal of lightwave technology 32 (12), 2188-2192, 2014 | 109 | 2014 |
GaInAsP/InP membrane lasers for optical interconnects S Arai, N Nishiyama, T Maruyama, T Okumura Selected Topics in Quantum Electronics, IEEE Journal of, 1-9, 2011 | 78 | 2011 |
GaInAsP/InP membrane BH-DFB lasers directly bonded on SOI substrate T Maruyama, T Okumura, S Sakamoto, K Miura, Y Nishimoto, S Arai Optics Express 14 (18), 8184-8188, 2006 | 71 | 2006 |
Hole-Injection-Type and Electron-Injection-Type Silicon Avalanche Photodiodes Fabricated by Standard 0.18- m CMOS Process K Iiyama, H Takamatsu, T Maruyama Photonics Technology Letters, IEEE 22 (12), 932-934, 2010 | 67 | 2010 |
Optical wireless power transmission using Si photovoltaic through air, water, and skin AWS Putra, M Tanizawa, T Maruyama IEEE Photonics Technology Letters 31 (2), 157-160, 2018 | 52 | 2018 |
Lateral current injection GaInAsP/InP laser on semi-insulating substrate for membrane-based photonic circuits T Okumura, M Kurokawa, M Shirao, D Kondo, H Ito, N Nishiyama, ... Optics Express 17 (15), 12564-12570, 2009 | 48 | 2009 |
High resolution FMCW reflectometry using a single-mode vertical cavity surface emitting laser K Iiyama, SI Matsui, T Kobayashi, T Maruyama Photonics Technology Letters, IEEE, 1-1, 2011 | 47 | 2011 |
Electronic band structures of GaInAsP/InP vertically stacked multiple quantum wires with strain-compensating barriers A Haque, H Yagi, T Sano, T Maruyama, S Arai Journal of applied physics 94, 2018, 2003 | 45 | 2003 |
GaInAsP/InP partially strain-compensated multiple-quantum-wire lasers fabricated by dry etching and regrowth processes H Yagi, T Sano, K Ohira, D Plumwongrot, T Maruyama, A Haque, ... Japanese journal of applied physics 43 (6R), 3401, 2004 | 36 | 2004 |
Loss reduction of Si wire waveguide fabricated by edge-enhancement writing for electron beam lithography and reactive ion etching using double layered resist mask with C60 K Inoue, D Plumwongrot, N Nishiyama, S Sakamoto, H Enomoto, ... Japanese Journal of Applied Physics 48 (3R), 030208, 2009 | 32 | 2009 |
85 C continuous-wave operation of GaInAsP/InP-membrane buried heterostructure distributed feedback lasers with polymer cladding layer S Sakamoto, H Naitoh, M Ohtake, Y Nishimoto, T Maruyama, N Nishiyama, ... Japanese Journal of Applied Physics 46 (12L), L1155, 2007 | 29 | 2007 |
Injection-Type GaInAsP–InP–Si Distributed-Feedback Laser Directly Bonded on Silicon-on-Insulator Substrate T Okumura, T Maruyama, H Yonezawa, N Nishiyama, S Arai Photonics Technology Letters, IEEE 21 (5), 283-285, 2009 | 26 | 2009 |
Single-mode operation of GaInAsP/InP-membrane distributed feedback lasers bonded on silicon-on-insulator substrate with rib-waveguide structure T Okumura, T Maruyama, M Kanemaru, S Sakamoto, S Arai Japanese Journal of Applied Physics 46 (12L), L1206, 2007 | 26 | 2007 |
Fabrication and characterization of amorphous polyethylene terephthalate optical waveguides K Iiyama, T Ishida, Y Ono, T Maruyama, T Yamagishi Photonics Technology Letters, IEEE, 1-1, 2011 | 24 | 2011 |
Reduced Temperature Dependence of Lasing Wavelength in Membrane Buried Heterostructure DFB Lasers With Polymer Cladding Layers S Sakamoto, H Kawashima, H Naitoh, S Tamura, T Maruyama, S Arai Photonics Technology Letters, IEEE 19 (5), 291-293, 2007 | 18 | 2007 |
Room temperature-continuous wave operation of GaInAsP/InP multiple-quantum-wire lasers by dry etching and regrowth method H Yagi, T Sano, K Ohira, T Maruyama, A Haque, S Arai Japanese journal of applied physics 42 (7A), L748-L750, 2003 | 18 | 2003 |
Electroluminescence of Nanocrystal Si Embedded in Single-Crystal CaF 2/Si (111) MWM Watanabe, TMT Matsunuma, TMT Maruyama, YMY Maeda Japanese journal of applied physics 37 (5B), L591, 1998 | 18 | 1998 |
Low-threshold-current operation of 1540 nm GaInAsP∕ InP distributed-feedback lasers with multiple-quantum-wire active regions H Yagi, K Miura, Y Nishimoto, D Plumwongrot, K Ohira, T Maruyama, ... Applied Physics Letters 87 (22), 2005 | 16 | 2005 |
Improvement of the Visible Electroluminescence from Nanocrystalline Silicon Embedded in CaF2 on Si (111) Substrate Prepared by Rapid Thermal Annealing T Maruyama, N Nakamura, M Watanabe Japanese Journal of Applied Physics 39, 1996, 2000 | 16 | 2000 |
Detection of hot electron current with scanning hot electron microscopy F Vazquez, D Kobayashi, I Kobayashi, Y Miyamoto, K Furuya, ... Applied physics letters 69, 2196, 1996 | 15 | 1996 |