Resistance switching in HfO2 metal-insulator-metal devices P Gonon, M Mougenot, C Vallée, C Jorel, V Jousseaume, H Grampeix, ... Journal of Applied Physics 107 (7), 2010 | 152 | 2010 |
Experimental evidence for the role of electrodes and oxygen vacancies in voltage nonlinearities observed in high-k metal-insulator-metal capacitors F El Kamel, P Gonon, C Vallée Applied Physics Letters 91 (17), 2007 | 63 | 2007 |
Electrode oxygen-affinity influence on voltage nonlinearities in high-k metal-insulator-metal capacitors C Vallée, P Gonon, C Jorel, F El Kamel Applied Physics Letters 96 (23), 2010 | 50 | 2010 |
Observation of negative capacitances in metal-insulator-metal devices based on a-BaTiO3: H F El Kamel, P Gonon, F Jomni, B Yangui Applied Physics Letters 93 (4), 2008 | 42 | 2008 |
Dielectric response of Cu∕ amorphous BaTiO3∕ Cu capacitors P Gonon, F El Kamel Journal of applied physics 101 (7), 2007 | 39 | 2007 |
Space charge limited transient currents and oxygen vacancy mobility in amorphous BaTiO3 thin films F El Kamel, P Gonon, L Ortéga, F Jomni, B Yangui Journal of applied physics 99 (9), 2006 | 39 | 2006 |
Thermally stimulated currents in amorphous barium titanate thin films deposited by rf magnetron sputtering F El Kamel, P Gonon, F Jomni, B Yangui Journal of applied physics 100 (5), 2006 | 37 | 2006 |
High κ for MIM and RRAM applications: Impact of the metallic electrode and oxygen vacancies C Vallée, P Gonon, C Jorel, F El Kamel, M Mougenot, V Jousseaume Microelectronic engineering 86 (7-9), 1774-1776, 2009 | 33 | 2009 |
High-density capacitors based on amorphous BaTiO3 layers grown under hydrogen containing atmosphere P Gonon, F El Kamel Applied physics letters 90 (23), 2007 | 27 | 2007 |
Electrode effects on the conduction mechanisms in HfO2-based metal-insulator-metal capacitors F El Kamel, P Gonon, C Vallée, C Jorel Journal of Applied Physics 106 (6), 2009 | 24 | 2009 |
Hydrogen doped BaTiO3 films as solid-state electrolyte for micro-supercapacitor applications ZB Cheikh, F El Kamel, O Gallot-Lavallée, MA Soussou, S Vizireanu, ... Journal of Alloys and Compounds 721, 276-284, 2017 | 19 | 2017 |
Voltage-induced recovery of dielectric breakdown (high current resistance switching) in HfO2 F El Kamel, P Gonon, C Vallee, V Jousseaume, H Grampeix Applied Physics Letters 98 (2), 2011 | 19 | 2011 |
Electrical properties of low temperature deposited amorphous barium titanate thin films as dielectrics for integrated capacitors F El Kamel, P Gonon, F Jomni Thin Solid Films 504 (1-2), 201-204, 2006 | 18 | 2006 |
Impact of oxygen vacancy related defects on the electrical properties of BaTiO3 based metal-insulator-metal devices F El Kamel, P Gonon IOP Conference Series: Materials Science and Engineering 8 (1), 012030, 2010 | 11 | 2010 |
Proton related defects in α-BaTiO3: H films based MIM capacitors F El Kamel, P Gonon Solid State Ionics 180 (11-13), 853-856, 2009 | 11 | 2009 |
Electrical active defects in HfO2 based metal/oxide/metal devices F El Kamel Journal of Physics D: Applied Physics 49 (1), 015306, 2015 | 8 | 2015 |
Enhancement of the double-layer capacitance in BaTiO3: H-based solid electrolyte F El Kamel, P Gonon Journal of the Electrochemical Society 157 (3), G91, 2010 | 8 | 2010 |
Investigation of electrically active defects in amorphous barium titanate thin films F El Kamel, P Gonon Materials science in semiconductor processing 9 (6), 923-927, 2006 | 7 | 2006 |
Temperature dependent electron effective mass and barrier height in HfO2 based metal/oxide/metal devices F El Kamel Journal of Physics D: Applied Physics 48 (28), 285304, 2015 | 6 | 2015 |
Ionic and electronic defects in a‐BaTiO3 thin films studied by transient and steady state conductivity measurements F El Kamel, P Gonon, B Yangui, F Jomni physica status solidi c 4 (3), 1242-1245, 2007 | 4 | 2007 |