| Optical absorption properties of BaSi2 epitaxial films grown on a transparent silicon-on-insulator substrate using molecular beam epitaxy K Toh, T Saito, T Suemasu Japanese Journal of Applied Physics 50 (6R), 068001, 2011 | 278 | 2011 |
| Room temperature 1.6 µm electroluminescence from a Si-based light emitting diode with β-FeSi2 active region TST Suemasu, YNY Negishi, KTK Takakura, FHF Hasegawa Japanese Journal of Applied Physics 39 (10B), L1013, 2000 | 266 | 2000 |
| Optical and electrical properties of semiconducting BaSi2 thin films on Si substrates grown by molecular beam epitaxy K Morita, Y Inomata, T Suemasu Thin Solid Films 508 (1-2), 363-366, 2006 | 253 | 2006 |
| Investigation of grain boundaries in BaSi2 epitaxial films on Si (1 1 1) substrates using transmission electron microscopy and electron-beam-induced current technique M Baba, K Toh, K Toko, N Saito, N Yoshizawa, K Jiptner, T Sekiguchi, ... Journal of crystal growth 348 (1), 75-79, 2012 | 184 | 2012 |
| Exploring the potential of semiconducting BaSi2 for thin-film solar cell applications T Suemasu, N Usami Journal of Physics D: Applied Physics 50 (2), 023001, 2016 | 176 | 2016 |
| Epitaxial growth of semiconducting BaSi2 films on Si (111) substrates by molecular beam epitaxy Y Inomata, T Nakamura, T Suemasu, F Hasegawa Japanese Journal of Applied Physics 43 (4A), L478, 2004 | 174 | 2004 |
| Investigation of the energy band structure of orthorhombic by optical and electrical measurements and theoretical calculations T Nakamura, T Suemasu, K Takakura, F Hasegawa, A Wakahara, M Imai Applied physics letters 81 (6), 1032-1034, 2002 | 154 | 2002 |
| Effect of amorphous Si capping layer on the hole transport properties of BaSi2 and improved conversion efficiency approaching 10% in p-BaSi2/n-Si solar cells S Yachi, R Takabe, H Takeuchi, K Toko, T Suemasu Applied Physics Letters 109 (7), 2016 | 145 | 2016 |
| Exploring the possibility of semiconducting BaSi2 for thin-film solar cell applications T Suemasu Japanese Journal of Applied Physics 54 (7S2), 07JA01, 2015 | 131 | 2015 |
| Determination of bulk minority-carrier lifetime in BaSi2 earth-abundant absorber films by utilizing a drastic enhancement of carrier lifetime by post-growth annealing KO Hara, N Usami, K Nakamura, R Takabe, M Baba, K Toko, T Suemasu Applied Physics Express 6 (11), 112302, 2013 | 128 | 2013 |
| Epitaxial growth of semiconducting BaSi2 thin films on Si (111) substrates by reactive deposition epitaxy Y Inomata, T Nakamura, T Suemasu, F Hasegawa Japanese journal of applied physics 43 (7R), 4155, 2004 | 125 | 2004 |
| High-electrical-conductivity multilayer graphene formed by layer exchange with controlled thickness and interlayer H Murata, Y Nakajima, N Saitoh, N Yoshizawa, T Suemasu, K Toko Scientific reports 9 (1), 4068, 2019 | 120 | 2019 |
| Low-temperature (180° C) formation of large-grained Ge (111) thin film on insulator using accelerated metal-induced crystallization K Toko, R Numata, N Oya, N Fukata, N Usami, T Suemasu Applied physics letters 104 (2), 2014 | 114 | 2014 |
| Control of electron and hole concentrations in semiconducting silicide BaSi2 with impurities grown by molecular beam epitaxy M Kobayashi, Y Matsumoto, Y Ichikawa, D Tsukada, T Suemasu Applied physics express 1 (5), 051403, 2008 | 113 | 2008 |
| Formation of β-FeSi 2 layers on Si (001) substrates MTM Tanaka, YKY Kumagai, TST Suemasu, FHF Hasegawa Japanese journal of applied physics 36 (6R), 3620, 1997 | 113 | 1997 |
| Highly (111)-oriented Ge thin films on insulators formed by Al-induced crystallization K Toko, M Kurosawa, N Saitoh, N Yoshizawa, N Usami, M Miyao, ... Applied physics letters 101 (7), 2012 | 111 | 2012 |
| Influence of grain size and surface condition on minority-carrier lifetime in undoped n-BaSi2 on Si (111) R Takabe, KO Hara, M Baba, W Du, N Shimada, K Toko, N Usami, ... Journal of applied physics 115 (19), 2014 | 109 | 2014 |
| Influence of Si growth temperature for embedding β- and resultant strain in β- on light emission from light-emitting diodes T Suemasu, Y Negishi, K Takakura, F Hasegawa, T Chikyow Applied Physics Letters 79 (12), 1804-1806, 2001 | 108 | 2001 |
| High-hole mobility polycrystalline Ge on an insulator formed by controlling precursor atomic density for solid-phase crystallization K Toko, R Yoshimine, K Moto, T Suemasu Scientific reports 7 (1), 16981, 2017 | 105 | 2017 |
| Investigation of the recombination mechanism of excess carriers in undoped BaSi2 films on silicon KO Hara, N Usami, K Toh, M Baba, K Toko, T Suemasu Journal of applied physics 112 (8), 2012 | 104 | 2012 |
Masashi KUROSAWANagoya UniversityVerified email at nagoya-u.jp