Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron M Forster, E Fourmond, FE Rougieux, A Cuevas, R Gotoh, K Fujiwara, ... Applied Physics Letters 100 (4), 2012 | 76 | 2012 |
Towards a unified low-field model for carrier mobilities in crystalline silicon F Schindler, M Forster, J Broisch, J Schön, J Giesecke, S Rein, W Warta, ... Solar Energy Materials and Solar Cells 131, 92-99, 2014 | 65 | 2014 |
Electrical properties of boron, phosphorus and gallium co-doped silicon E Fourmond, M Forster, R Einhaus, H Lauvray, J Kraiem, M Lemiti Energy Procedia 8, 349-354, 2011 | 54 | 2011 |
Influence of net doping, excess carrier density and annealing on the boron oxygen related defect density in compensated n-type silicon FE Rougieux, B Lim, J Schmidt, M Forster, D Macdonald, A Cuevas Journal of Applied Physics 110 (6), 2011 | 50 | 2011 |
From simulation to experiment: Understanding BO-regeneration kinetics S Wilking, M Forster, A Herguth, G Hahn Solar Energy Materials and Solar Cells 142, 87-91, 2015 | 45 | 2015 |
Ga co‐doping in Cz‐grown silicon ingots to overcome limitations of B and P compensated silicon feedstock for PV applications M Forster, E Fourmond, R Einhaus, H Lauvray, J Kraiem, M Lemiti physica status solidi c 8 (3), 678-681, 2011 | 40 | 2011 |
Compensation engineering for silicon solar cells A Cuevas, M Forster, F Rougieux, D Macdonald Energy Procedia 15, 67-77, 2012 | 39 | 2012 |
Impact of incomplete ionization of dopants on the electrical properties of compensated p-type silicon M Forster, A Cuevas, E Fourmond, FE Rougieux, M Lemiti Journal of Applied Physics 111 (4), 2012 | 35 | 2012 |
High efficiency UMG silicon solar cells: impact of compensation on cell parameters F Rougieux, C Samundsett, KC Fong, A Fell, P Zheng, D Macdonald, ... Progress in Photovoltaics: Research and Applications 24 (5), 725-734, 2016 | 33 | 2016 |
Impact of compensation on the boron and oxygen-related degradation of upgraded metallurgical-grade silicon solar cells M Forster, P Wagner, J Degoulange, R Einhaus, G Galbiati, FE Rougieux, ... Solar energy materials and solar cells 120, 390-395, 2014 | 30 | 2014 |
Recombination activity and impact of the boron–oxygen-related defect in compensated n-type silicon FE Rougieux, M Forster, D MacDonald, A Cuevas, B Lim, J Schmidt IEEE Journal of Photovoltaics 1 (1), 54-58, 2011 | 27 | 2011 |
Applications of photoluminescence imaging to dopant and carrier concentration measurements of silicon wafers SY Lim, M Forster, X Zhang, J Holtkamp, MC Schubert, A Cuevas, ... IEEE Journal of Photovoltaics 3 (2), 649-655, 2012 | 24 | 2012 |
Incomplete ionization and carrier mobility in compensated p-type and n-type silicon M Forster, FE Rougieux, A Cuevas, B Dehestru, A Thomas, E Fourmond, ... IEEE Journal of Photovoltaics 3 (1), 108-113, 2012 | 23 | 2012 |
19% efficiency heterojunction solar cells on Cz wafers from non-blended upgraded metallurgical silicon R Einhaus, J Kraiem, J Degoulange, O Nichiporuk, M Forster, P Papet, ... 2012 38th IEEE Photovoltaic Specialists Conference, 003234-003237, 2012 | 17 | 2012 |
Lifetime degradation on n-type wafers with boron-diffused and SiO2/SiN-passivated surface C Renevier, E Fourmond, M Forster, S Parola, M Le Coz, E Picard Energy Procedia 55, 280-286, 2014 | 14 | 2014 |
Doping engineering to increase the material yield during crystallization of B and P compensated silicon M Forster, E Fourmond, R Einhaus, H Lauvray, J Kraiem, M Lemiti 25th European Photovoltaic Solar Energy Conference and Exhibition/5th World …, 2010 | 13 | 2010 |
Compensation engineering for uniform n-type silicon ingots M Forster, B Dehestru, A Thomas, E Fourmond, R Einhaus, A Cuevas, ... Solar energy materials and solar cells 111, 146-152, 2013 | 12 | 2013 |
Donor-acceptor pair luminescence in B and P compensated Si co-doped with Ga M Tajima, K Tanaka, M Forster, H Toyota, A Ogura Journal of Applied Physics 113 (24), 2013 | 11 | 2013 |
Photosil UMG silicon: industrial evaluation by multi-c p-type ingots and solar cells F Cocco, D Grosset-Bourbange, P Rivat, G Quost, J Degoulange, ... Proceedings of the 28th EUPVSEC, Paris, France, 1435-1438, 2013 | 11 | 2013 |
New method for grain size characterization of a multi-crystalline silicon ingot M Forster, E Fourmond, JM Lebrun, R Einhaus, J Kraiem, M Lemiti 24th European Photovoltaic Specialists Conference, 4, 2009 | 3 | 2009 |