Articles with public access mandates - Zirui WangLearn more
Not available anywhere: 5
Investigation of the off-state degradation in advanced FinFET technology—Part I: Experiments and analysis
Z Sun, Z Wang, R Wang, L Zhang, J Zhang, Z Zhang, J Song, D Wang, ...
IEEE Transactions on Electron Devices 70 (3), 914-920, 2023
Mandates: National Natural Science Foundation of China
On the understanding of defects in short-term negative bias temperature instability (NBTI) for sub-20-nm DRAM technology
D Wang, L Zhou, Y Xue, P Ren, Z Sun, Z Wang, J Wang, B Wu, Z Ji, ...
IEEE Electron Device Letters 44 (6), 939-942, 2023
Mandates: National Natural Science Foundation of China
Investigation of hot carrier enhanced body bias effect in advanced FinFET technology
Z Sun, H Lu, Y Xue, W Luo, Z Wang, J Zhang, Z Ji, R Wang, R Huang
2023 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2023
Mandates: National Natural Science Foundation of China
Investigation of the off-state degradation in advanced FinFET technology—Part II: Compact aging model and impact on circuits
Z Sun, Z Wang, R Wang, L Zhang, J Zhang, Z Zhang, J Song, D Wang, ...
IEEE Transactions on Electron Devices 70 (3), 921-927, 2023
Mandates: National Natural Science Foundation of China
Advanced compact modeling for transistor aging: Trap-based approaches and mixed-mode coupling
R Wang, Z Sun, Y Li, Y Xue, Z Wang, P Ren, Z Ji, L Zhang, R Huang
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2023
Mandates: National Natural Science Foundation of China
Available somewhere: 4
Understanding hot carrier reliability in FinFET technology from trap-based approach
R Wang, Z Sun, YY Liu, Z Yu, Z Wang, X Jiang, R Huang
2021 IEEE International Electron Devices Meeting (IEDM), 31.2. 1-31.2. 4, 2021
Mandates: National Natural Science Foundation of China
Body bias dependence of bias temperature instability (BTI) in bulk FinFET technology
J Zhang, Z Wang, R Wang, Z Sun, R Huang
Energy & Environmental Materials 5 (4), 1200-1203, 2022
Mandates: National Natural Science Foundation of China
Compact modeling of quantum confinements in nanoscale gate-all-around MOSFETs
B Peng, Y Jiao, H Zhong, Z Rong, Z Wang, Y Xiao, W Wong, L Zhang, ...
Fundamental Research, 2023
Mandates: National Natural Science Foundation of China
On the understanding of pMOS NBTI degradation in advance nodes: Characterization, modeling, and exploration on the physical origin of defects
Y Xue, P Ren, J Wu, Z Liu, S Wang, Y Li, Z Wang, Z Sun, D Wang, Y Wen, ...
IEEE Transactions on Electron Devices, 2023
Mandates: National Natural Science Foundation of China
Publication and funding information is determined automatically by a computer program