| A review of recent MOSFET threshold voltage extraction methods A Ortiz-Conde, FJG Sánchez, JJ Liou, A Cerdeira, M Estrada, Y Yue Microelectronics Reliability 42 (4-5), 583-596, 2002 | 1187 | 2002 |
| New method to extract the model parameters of solar cells from the explicit analytic solutions of their illuminated I–V characteristics A Ortiz-Conde, FJG Sánchez, J Muci Solar Energy Materials and Solar Cells 90 (3), 352-361, 2006 | 516 | 2006 |
| Revisiting MOSFET threshold voltage extraction methods A Ortiz-Conde, FJ García-Sánchez, J Muci, AT Barrios, JJ Liou, CS Ho Microelectronics Reliability 53 (1), 90-104, 2013 | 353 | 2013 |
| Anomalous leakage current in LPCVD polysilicon MOSFET's JG Fossum, A Ortiz-Conde, H Shichijo, SK Banerjee IEEE Transactions on Electron Devices 32 (9), 1878-1884, 1985 | 333 | 1985 |
| New procedure for the extraction of basic a-Si: H TFT model parameters in the linear and saturation regions A Cerdeira, M Estrada, R Garcıa, A Ortiz-Conde, FJG Sánchez Solid-State Electronics 45 (7), 1077-1080, 2001 | 196 | 2001 |
| Exact analytical solutions of the forward non-ideal diode equation with series and shunt parasitic resistances A Ortiz-Conde, FJG Sanchez, J Muci Solid-State Electronics 44 (10), 1861-1864, 2000 | 169 | 2000 |
| Analysis and design of MOSFETs: modeling, simulation, and parameter extraction JJ Liou, A Ortiz-Conde, F Garcia-Sanchez Springer Science & Business Media, 2012 | 163* | 2012 |
| A review of core compact models for undoped double-gate SOI MOSFETs A Ortiz-Conde, FJ García-Sánchez, J Muci, S Malobabic, JJ Liou IEEE Transactions on Electron Devices 54 (1), 131-140, 2007 | 156 | 2007 |
| Rigorous analytic solution for the drain current of undoped symmetric dual-gate MOSFETs A Ortiz-Conde, FJG Sanchez, J Muci Solid-State Electronics 49 (4), 640-647, 2005 | 150 | 2005 |
| Effects of grain boundaries on the channel conductance of SOl MOSFET's JG Fossum, A Ortiz-Conde IEEE Transactions on Electron Devices 30 (8), 933-940, 1983 | 131 | 1983 |
| Exact analytical solution of channel surface potential as an explicit function of gate voltage in undoped-body MOSFETs using the Lambert W function and a … A Ortiz-Conde, FJG Sánchez, M Guzmán Solid-State Electronics 47 (11), 2067-2074, 2003 | 125 | 2003 |
| Analytic solution of the channel potential in undoped symmetric dual-gate MOSFETs A Ortiz-Conde, FJ García-Sánchez, S Malobabic IEEE Transactions on electron Devices 52 (7), 1669-1672, 2005 | 122 | 2005 |
| An explicit multiexponential model as an alternative to traditional solar cell models with series and shunt resistances A Ortiz-Conde, D Lugo-Munoz, FJ García-Sánchez IEEE Journal of Photovoltaics 2 (3), 261-268, 2012 | 91 | 2012 |
| Direct extraction of semiconductor device parameters using lateral optimization method A Ortiz-Conde, Y Ma, J Thomson, E Santos, JJ Liou, FJG Sánchez, M Lei, ... Solid-State Electronics 43 (4), 845-848, 1999 | 85 | 1999 |
| A review of diode and solar cell equivalent circuit model lumped parameter extraction procedures A Ortiz-Conde, FJ García-Sánchez, J Muci, A Sucre-González Facta universitatis-series: Electronics and Energetics 27 (1), 57-102, 2014 | 80 | 2014 |
| Extraction of non-ideal junction model parameters from the explicit analytic solutions of its I–V characteristics A Ortiz-Conde, FJG Sánchez Solid-state electronics 49 (3), 465-472, 2005 | 77 | 2005 |
| Parasitic series resistance-independent method for device-model parameter extraction FJG Sánchez, A Ortiz–Conde, JJ Liou IEE Proceedings-Circuits, Devices and Systems 143 (1), 68-70, 1996 | 68 | 1996 |
| New method for determination of harmonic distortion in SOI FD transistors A Cerdeira, M Estrada, R Quintero, D Flandre, A Ortiz-Conde, ... Solid-State Electronics 46 (1), 103-108, 2002 | 66 | 2002 |
| New simple procedure to determine the threshold voltage of MOSFETs FJG Sánchez, A Ortiz-Conde, G De Mercato, JA Salcedo, JJ Liou, Y Yue Solid-State Electronics 44 (4), 673-675, 2000 | 63 | 2000 |
| Long-channel silicon-on-insulator MOSFET theory A Ortiz-Conde, R Herrera, PE Schmidt, FJG Sánchez, J Andrian Solid-state electronics 35 (9), 1291-1298, 1992 | 63 | 1992 |