Enhanced ferroelectricity in ultrathin films grown directly on silicon SS Cheema, D Kwon, N Shanker, R Dos Reis, SL Hsu, J Xiao, H Zhang, ... Nature 580 (7804), 478-482, 2020 | 638 | 2020 |
Improved subthreshold swing and short channel effect in FDSOI n-channel negative capacitance field effect transistors D Kwon, K Chatterjee, AJ Tan, AK Yadav, H Zhou, AB Sachid, R Dos Reis, ... IEEE Electron Device Letters 39 (2), 300-303, 2017 | 168 | 2017 |
Ferroelectric HfO2 Memory Transistors With High-κ Interfacial Layer and Write Endurance Exceeding 1010 Cycles AJ Tan, YH Liao, LC Wang, N Shanker, JH Bae, C Hu, S Salahuddin IEEE Electron Device Letters 42 (7), 994-997, 2021 | 147 | 2021 |
Negative Capacitance FET With 1.8-nm-Thick Zr-Doped HfO2 Oxide D Kwon, S Cheema, N Shanker, K Chatterjee, YH Liao, AJ Tan, C Hu, ... IEEE Electron Device Letters 40 (6), 993-996, 2019 | 128 | 2019 |
Self-Aligned, Gate Last, FDSOI, Ferroelectric Gate Memory Device With 5.5-nm Hf0.8Zr0.2O2, High Endurance and Breakdown Recovery K Chatterjee, S Kim, G Karbasian, AJ Tan, AK Yadav, AI Khan, C Hu, ... IEEE Electron Device Letters 38 (10), 1379-1382, 2017 | 95 | 2017 |
Stabilization of ferroelectric phase in tungsten capped Hf0. 8Zr0. 2O2 G Karbasian, R Dos Reis, AK Yadav, AJ Tan, C Hu, S Salahuddin Applied Physics Letters 111 (2), 2017 | 74 | 2017 |
Experimental Demonstration of a Ferroelectric HfO2-Based Content Addressable Memory Cell AJ Tan, K Chatterjee, J Zhou, D Kwon, YH Liao, S Cheema, C Hu, ... IEEE Electron Device Letters 41 (2), 240-243, 2019 | 61 | 2019 |
Highly scaled, high endurance, Ω-gate, nanowire ferroelectric FET memory transistors JH Bae, D Kwon, N Jeon, S Cheema, AJ Tan, C Hu, S Salahuddin IEEE Electron Device Letters 41 (11), 1637-1640, 2020 | 56 | 2020 |
Negative capacitance, n-channel, Si FinFETs: Bi-directional sub-60 mV/dec, negative DIBL, negative differential resistance and improved short channel effect H Zhou, D Kwon, AB Sachid, Y Liao, K Chatterjee, AJ Tan, AK Yadav, ... 2018 IEEE Symposium on VLSI Technology, 53-54, 2018 | 54 | 2018 |
Near threshold capacitance matching in a negative capacitance FET with 1 nm effective oxide thickness gate stack D Kwon, S Cheema, YK Lin, YH Liao, K Chatterjee, AJ Tan, C Hu, ... IEEE Electron Device Letters 41 (1), 179-182, 2019 | 46 | 2019 |
Hot electrons as the dominant source of degradation for sub-5nm HZO FeFETs AJ Tan, M Pešić, L Larcher, YH Liao, LC Wang, JH Bae, C Hu, ... 2020 IEEE Symposium on VLSI Technology, 1-2, 2020 | 44 | 2020 |
Response speed of negative capacitance FinFETs D Kwon, YH Liao, YK Lin, JP Duarte, K Chatterjee, AJ Tan, AK Yadav, ... 2018 IEEE Symposium on VLSI Technology, 49-50, 2018 | 43 | 2018 |
Challenges to Partial Switching of Hf0.8Zr0.2O2 Gated Ferroelectric FET for Multilevel/Analog or Low-Voltage Memory Operation K Chatterjee, S Kim, G Karbasian, D Kwon, AJ Tan, AK Yadav, CR Serrao, ... IEEE Electron Device Letters 40 (9), 1423-1426, 2019 | 35 | 2019 |
A nitrided interfacial oxide for interface state improvement in hafnium zirconium oxide-based ferroelectric transistor technology AJ Tan, AK Yadav, K Chatterjee, D Kwon, S Kim, C Hu, S Salahuddin IEEE Electron Device Letters 39 (1), 95-98, 2017 | 33 | 2017 |
Anomalously beneficial gate-length scaling trend of negative capacitance transistors YH Liao, D Kwon, YK Lin, AJ Tan, C Hu, S Salahuddin IEEE Electron Device Letters 40 (11), 1860-1863, 2019 | 31 | 2019 |
Fast read-after-write and depolarization fields in high endurance n-type ferroelectric FETs M Hoffmann, AJ Tan, N Shanker, YH Liao, LC Wang, JH Bae, C Hu, ... IEEE Electron Device Letters 43 (5), 717-720, 2022 | 28 | 2022 |
Ferroelectricity in HfO2 thin films as a function of Zr doping G Karbasian, A Tan, A Yadav, EMH Sorensen, CR Serrao, AI Khan, ... 2017 International Symposium on VLSI Technology, Systems and Application …, 2017 | 20 | 2017 |
Electric field-induced permittivity enhancement in negative-capacitance FET YH Liao, D Kwon, S Cheema, N Shanker, AJ Tan, MY Kao, LC Wang, ... IEEE Transactions on Electron Devices 68 (3), 1346-1351, 2021 | 13 | 2021 |
FeFETs for near-memory and in-memory compute S Salahuddin, A Tan, S Cheema, N Shanker, M Hoffmann, JH Bae 2021 IEEE International Electron Devices Meeting (IEDM), 19.4. 1-19.4. 4, 2021 | 9 | 2021 |
Write disturb-free ferroelectric FETs with non-accumulative switching dynamics M Hoffmann, AJ Tan, N Shanker, YH Liao, LC Wang, JH Bae, C Hu, ... IEEE Electron Device Letters 43 (12), 2097-2100, 2022 | 8 | 2022 |