Synaptic devices based neuromorphic computing applications in artificial intelligence B Sun, T Guo, G Zhou, S Ranjan, Y Jiao, L Wei, YN Zhou, YA Wu Materials Today Physics 18, 100393, 2021 | 196 | 2021 |
Coexistence of Negative Differential Resistance and Resistive Switching Memory at Room Temperature in TiOx Modulated by Moisture G Zhou, S Duan, P Li, B Sun, B Wu, Y Yao, X Yang, J Han, J Wu, G Wang, ... Advanced Electronic Materials 4 (4), 1700567, 2018 | 161 | 2018 |
A unified capacitive-coupled memristive model for the nonpinched current–voltage hysteresis loop B Sun, Y Chen, M Xiao, G Zhou, S Ranjan, W Hou, X Zhu, Y Zhao, ... Nano letters 19 (9), 6461-6465, 2019 | 156 | 2019 |
An organic nonvolatile resistive switching memory device fabricated with natural pectin from fruit peel B Sun, X Zhang, G Zhou, P Li, Y Zhang, H Wang, Y Xia, Y Zhao Organic Electronics 42, 181-186, 2017 | 137 | 2017 |
Volatile and nonvolatile memristive devices for neuromorphic computing G Zhou, Z Wang, B Sun, F Zhou, L Sun, H Zhao, X Hu, X Peng, J Yan, ... Advanced Electronic Materials 8 (7), 2101127, 2022 | 134 | 2022 |
Resistive switching memory integrated with amorphous carbon-based nanogenerators for self-powered device G Zhou, Z Ren, L Wang, J Wu, B Sun, A Zhou, G Zhang, S Zheng, S Duan, ... Nano Energy 63, 103793, 2019 | 127 | 2019 |
Biomemristors as the next generation bioelectronics B Sun, G Zhou, T Guo, YN Zhou, YA Wu Nano Energy 75, 104938, 2020 | 126 | 2020 |
Artificial and wearable albumen protein memristor arrays with integrated memory logic gate functionality G Zhou, Z Ren, L Wang, B Sun, S Duan, Q Song Materials Horizons 6 (9), 1877-1882, 2019 | 123 | 2019 |
Capacitive effect: An original of the resistive switching memory G Zhou, Z Ren, B Sun, J Wu, Z Zou, S Zheng, L Wang, S Duan, Q Song Nano Energy 68, 104386, 2020 | 120 | 2020 |
Negative Photoconductance Effect: An Extension Function of the TiOx‐Based Memristor G Zhou, B Sun, X Hu, L Sun, Z Zou, B Xiao, W Qiu, B Wu, J Li, J Han, ... Advanced Science 8 (13), 2003765, 2021 | 115 | 2021 |
ABO 3 multiferroic perovskite materials for memristive memory and neuromorphic computing B Sun, G Zhou, L Sun, H Zhao, Y Chen, F Yang, Y Zhao, Q Song Nanoscale Horizons 6 (12), 939-970, 2021 | 104 | 2021 |
Investigation of the behaviour of electronic resistive switching memory based on MoSe2-doped ultralong Se microwires G Zhou, B Sun, Y Yao, H Zhang, A Zhou, K Alameh, B Ding, Q Song Applied Physics Letters 109 (14), 2016 | 102 | 2016 |
High open-circuit voltage of 1.134 V for inverted planar perovskite solar cells with sodium citrate-doped PEDOT: PSS as a hole transport layer W Hu, CY Xu, LB Niu, AM Elseman, G Wang, DB Liu, YQ Yao, LP Liao, ... ACS applied materials & interfaces 11 (24), 22021-22027, 2019 | 90 | 2019 |
Investigation of a submerging redox behavior in Fe2O3 solid electrolyte for resistive switching memory G Zhou, X Yang, L Xiao, B Sun, A Zhou Applied Physics Letters 114 (16), 2019 | 90 | 2019 |
Non–zero-crossing current-voltage hysteresis behavior in memristive system B Sun, M Xiao, G Zhou, Z Ren, YN Zhou, YA Wu Materials Today Advances 6, 100056, 2020 | 75 | 2020 |
Coordinated optical matching of a texture interface made from demixing blended polymers for high-performance inverted perovskite solar cells CY Xu, W Hu, G Wang, L Niu, AM Elseman, L Liao, Y Yao, G Xu, L Luo, ... ACS nano 14 (1), 196-203, 2019 | 74 | 2019 |
Mechanism analysis of a flexible organic memristive memory with capacitance effect and negative differential resistance state S Zhu, B Sun, S Ranjan, X Zhu, G Zhou, H Zhao, S Mao, H Wang, Y Zhao, ... APL Materials 7 (8), 2019 | 66 | 2019 |
A flexible nonvolatile resistive switching memory device based on ZnO film fabricated on a foldable PET substrate B Sun, X Zhang, G Zhou, T Yu, S Mao, S Zhu, Y Zhao, Y Xia Journal of colloid and interface science 520, 19-24, 2018 | 65 | 2018 |
Effect of Cu ions assisted conductive filament on resistive switching memory behaviors in ZnFe2O4-based devices B Sun, X Zhang, G Zhou, C Zhang, P Li, Y Xia, Y Zhao journal of alloys and compounds 694, 464-470, 2017 | 64 | 2017 |
An electroforming-free, analog interface-type memristor based on a SrFeOx epitaxial heterojunction for neuromorphic computing J Rao, Z Fan, L Hong, S Cheng, Q Huang, J Zhao, X Xiang, EJ Guo, ... Materials Today Physics 18, 100392, 2021 | 63 | 2021 |