Articles with public access mandates - Ionut RaduLearn more
Not available anywhere: 5
Characterization of fully silicided source/drain SOI UTBB nMOSFETs at cryogenic temperatures
Y Han, F Xi, F Allibert, I Radu, S Prucnal, JH Bae, S Hoffmann-Eifert, ...
Solid-State Electronics 192, 108263, 2022
Mandates: Chinese Academy of Sciences, German Research Foundation
3D sequential integration: applications and associated key enabling modules (design & technology)
P Batude, O Billoint, S Thuries, P Malinge, C Fenouillet-Beranger, ...
2021 IEEE International Electron Devices Meeting (IEDM), 3.2. 1-3.2. 4, 2021
Mandates: European Commission
Impact of the backgate on the Performance of SOI UTBB nMOSFETs at cryogenic temperatures
Y Han, F Xi, F Allibert, I Radu, S Prucnal, JH Bae, S Hoffmann-Eifert, ...
2021 Joint International EUROSOI Workshop and International Conference on …, 2021
Mandates: German Research Foundation
Ferroelectric Junctionless Double-Gate Silicon-On-Insulator FET as a Tripartite Synapse
C Gastaldi, S Kamaei, M Cavalieri, A Saeidi, I Stolichnov, I Radu, ...
IEEE Electron Device Letters 44 (4), 678-681, 2023
Mandates: Swiss National Science Foundation, European Commission
SmartSiC™ for Manufacturing of SiC Power Devices
N Daval, A Drouin, H Biard, L Viravaux, D Radisson, S Rouchier, ...
2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM …, 2022
Mandates: European Commission
Available somewhere: 3
Steep switching Si nanowire p-FETs with dopant segregated silicide source/drain at cryogenic temperature
Y Han, J Sun, B Richstein, F Allibert, I Radu, JH Bae, D Grützmacher, ...
IEEE Electron Device Letters 43 (8), 1187-1190, 2022
Mandates: German Research Foundation
Multi-gate FD-SOI single electron transistor for hybrid SET-MOSFET quantum computing
F Bersano, F De Palma, F Oppliger, F Braakman, I Radu, P Scarlino, ...
Esscirc 2022-Ieee 48Th European Solid State Circuits Conference (Esscirc), 49-52, 2022
Mandates: Swiss National Science Foundation
Tailored Polycrystalline Substrate for SmartSiCTM Substrates Enabling High Performance Power Devices
H Biard, S Odoul, W Schwarzenbach, I Radu, C Maleville, A Potier, ...
Solid State Phenomena 344, 47-52, 2023
Mandates: European Commission
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