An improved silicon-controlled rectifier (SCR) for low-voltage ESD application F Du, F Hou, W Song, L Chen, Y Nie, Y Qing, Y Xu, J Liu, Z Liu, JJ Liou IEEE Transactions on Electron Devices 67 (2), 576-581, 2020 | 21 | 2020 |
Compact and low leakage devices for bidirectional low-voltage ESD protection applications F Du, Y Qing, F Hou, K Zou, W Song, R Chen, J Liu, L Chen, JJ Liou, Z Liu IEEE Electron Device Letters 42 (3), 391-394, 2021 | 11 | 2021 |
Transmission Line Pulse Induced Breakdown of FinFETs X Yang, Y Qing, Z Dong, KS Chang-Liao, Y Qian, Z Zhang, F Liang, C Luo, ... 2022 International EOS/ESD Symposium on Design and System (IEDS), 1-4, 2022 | | 2022 |
An improved test methodology for detecting one-case latent damage in inverter circuit under ESD pulses Y Qing, A Han, W Liao, L Chen, Z Yang, F Du, T Xie, YL Wu, Z Liu, ... Microelectronics Reliability 134, 114562, 2022 | | 2022 |
Metal Migration Induced Breakdown from Gate Contact in Bulk FinFET Devices X Yang, Y Qing, KS Chang-Liao, Y Qiao, C Wang, Z Liu, L Li, C Tsai, ... 2021 IEEE International Symposium on the Physical and Failure Analysis of …, 2021 | | 2021 |
Novel Omega-Gate heterojunction tunneling FET with a new analytical model Y Qing, TK Chiang, L Wang, F Du, T Xie, Y Cao, Z Liu Semiconductor Science and Technology 36 (6), 065011, 2021 | | 2021 |