| Three-dimensional semiconductor memory device and method for fabricating the same D Yoo, PO Nam, J Yang, W Lee, W Lee, JG Kim, D Eom US Patent 9,076,879, 2015 | 94 | 2015 |
| Semiconductor memory devices and methods for fabricating the same J Yang, PO Nam, JG Kim, J Ahn, S Lim, K Hwang US Patent App. 13/587,379, 2013 | 85 | 2013 |
| Effect of grain size of Pb (Zr0. 4Ti0. 6) O3 sol–gel derived thin films on the ferroelectric properties JK Yang, WS Kim, HH Park Applied surface science 169, 544-548, 2001 | 69 | 2001 |
| Chemical and electrical characterization of Gd2O3∕ GaAs interface improved by sulfur passivation JK Yang, MG Kang, HH Park Journal of applied physics 96 (9), 4811-4816, 2004 | 67 | 2004 |
| Three-dimensional semiconductor memory devices and methods of fabricating the same B Jang, J Yun, KS Seol, C Jungdal, B Kim, K Park, J Yang, S Lim US Patent App. 13/838,159, 2013 | 60 | 2013 |
| Semiconductor memory devices and methods of fabricating the same B Jang, J Kim, W Lee, J Lee, C Kim, J Yang, PO Nam, J Ahn, K Hwang US Patent 9,130,054, 2015 | 57 | 2015 |
| Three-dimensional semiconductor memory device and method for manufacturing the same LEE Changwon, K Hwang, H Choi, SW Lee, J Yang, S Kim, J Lee, S Jo US Patent App. 13/157,659, 2011 | 55 | 2011 |
| Band engineered charge trap layer for highly reliable MLC flash memory ZL Huo, JK Yang, SH Lim, SJ Baik, J Lee, JH Han, IS Yeo, UI Chung, ... 2007 IEEE Symposium on VLSI Technology, 138-139, 2007 | 51 | 2007 |
| The effect of excess Pb content on the crystallization and electrical properties in sol–gel derived Pb (Zr0. 4Ti0. 6) O3 thin films JK Yang, WS Kim, HH Park Thin Solid Films 377, 739-744, 2000 | 51 | 2000 |
| Vertical type semiconductor devices including oxidation target layers P Nam, J Yang, B Jang, KH Hwang, JY Ahn US Patent 8,987,805, 2015 | 45 | 2015 |
| Chemical bonding states and energy band gap of SiO2-incorporated La2O3 films on n-GaAs (001) JK Yang, WS Kim, HH Park Thin Solid Films 494 (1-2), 311-314, 2006 | 42 | 2006 |
| Vertical-type nonvolatile memory device and method of manufacturing the same P Nam, J Yang, HH Lim, KH Hwang, JY Ahn, DC Yoo US Patent 9,431,416, 2016 | 36 | 2016 |
| Charge trap flash memory device and memory card and system including the same ZL Huo, IS Yeo, SH Lim, KH Joo, J Yang US Patent 8,269,268, 2012 | 33 | 2012 |
| Vertical structure non-volatile memory device and method of manufacturing the same J Yang, KH Hwang, P Nam, JY Ahn, H Choi, DC Yoo US Patent 8,748,249, 2014 | 30 | 2014 |
| Ferroelectric-gate field effect transistors using Nd2Ti2O7/Y2O3/Si structures WS Kim, SM Ha, JK Yang, HH Park Thin Solid Films 398, 663-667, 2001 | 29 | 2001 |
| Method of manufacturing semiconductor device J Yang, P Nam, KH Hwang, JY Ahn, H Choi, B Kim US Patent 8,617,947, 2013 | 28 | 2013 |
| Energy band structure and electrical properties of (La2O3) 1− x (SiO2) x (⩽ x⩽ 1)∕ n-GaAs (001) system JK Yang, HH Park Applied Physics Letters 87 (20), 2005 | 25 | 2005 |
| Vertical memory devices and method of manufacturing the same JH Kim, J Yang, HH Lim, JH Choi, KH Hwang US Patent 9,276,133, 2016 | 24 | 2016 |
| Characterization of PLZT thin film prepared by photochemical deposition using photosensitive metal-organic precursors HH Park, WS Kim, JK Yang, HH Park, RH Hill Microelectronic engineering 71 (2), 215-220, 2004 | 24 | 2004 |
| Vertical memory devices and methods of manufacturing the same P Nam, J Yang, JG Kim, JY Ahn, HH Lim, KH Hwang US Patent 9,461,061, 2016 | 23 | 2016 |
