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Interface Trap Density Reduction for Al2O3/GaN (0001) Interfaces by Oxidizing Surface Preparation prior to Atomic Layer Deposition
DM Zhernokletov, MA Negara, RD Long, S Aloni, D Nordlund, ...
ACS applied materials & interfaces 7 (23), 12774-12780, 2015
Mandates: US Department of Energy
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