Articles with public access mandates - Joachim KnochLearn more
Not available anywhere: 22
Electrostatic doping—controlling the properties of carbon-based FETs with gates
J Knoch, MR Mueller
IEEE Transactions on Nanotechnology 13 (6), 1044-1052, 2014
Mandates: German Research Foundation
Investigations on Field‐Effect Transistors Based on Two‐Dimensional Materials
T Finge, F Riederer, MR Mueller, T Grap, K Kallis, J Knoch
Annalen der Physik 529 (11), 1700087, 2017
Mandates: German Research Foundation
Role of elemental intermixing at the In2S3/CIGSe heterojunction deposited using reactive RF magnetron sputtering
P Soni, M Raghuwanshi, R Wuerz, B Berghoff, J Knoch, D Raabe, ...
Solar Energy Materials and Solar Cells 195, 367-375, 2019
Mandates: Federal Ministry of Education and Research, Germany
Delineating charge and capacitance transduction in system-integrated graphene-based BioFETs used as aptasensors for malaria detection
G Figueroa-Miranda, Y Liang, M Suranglikar, M Stadler, N Samane, ...
Biosensors and Bioelectronics 208, 114219, 2022
Mandates: German Research Foundation
Record-high solar-to-hydrogen conversion efficiency based on a monolithic all-silicon triple-junction IBC solar cell
S Nordmann, B Berghoff, A Hessel, B Zielinsk, J John, S Starschich, ...
Solar Energy Materials and Solar Cells 191, 422-426, 2019
Mandates: German Research Foundation
Buried triple-gate structures for advanced field-effect transistor devices
MR Mueller, A Gumprich, F Schuette, K Kallis, U Kuenzelmann, S Engels, ...
Microelectronic engineering 119, 95-99, 2014
Mandates: German Research Foundation
Diameter scaling of vertical Ge gate-all-around nanowire pMOSFETs
M Liu, F Lentz, S Trellenkamp, JM Hartmann, J Knoch, D Grützmacher, ...
IEEE Transactions on Electron Devices 67 (7), 2988-2994, 2020
Mandates: Federal Ministry of Education and Research, Germany
Nanowire tunneling field-effect transistors
J Knoch
Semiconductors and Semimetals 94, 273-295, 2016
Mandates: German Research Foundation
Interface engineering for steep slope cryogenic MOSFETs
B Richstein, Y Han, Q Zhao, L Hellmich, J Klos, S Scholz, LR Schreiber, ...
IEEE Electron Device Letters 43 (12), 2149-2152, 2022
Mandates: German Research Foundation
Characterization of fully silicided source/drain SOI UTBB nMOSFETs at cryogenic temperatures
Y Han, F Xi, F Allibert, I Radu, S Prucnal, JH Bae, S Hoffmann-Eifert, ...
Solid-State Electronics 192, 108263, 2022
Mandates: Chinese Academy of Sciences, German Research Foundation
A monolithic all-silicon multi-junction solar device for direct water splitting
S Nordmann, B Berghoff, A Hessel, N Wilck, B Osullivan, M Debucquoy, ...
Renewable Energy 94, 90-95, 2016
Mandates: German Research Foundation
Electrostatic doping of 2D-materials—from single devices toward circuitry exploration
KT Kallis, MR Müller, J Knoch, A Gumprich, D Merten
Quantum Matter 6 (1), 45-49, 2017
Mandates: German Research Foundation
High performance 5 nm Si nanowire FETs with a record small SS= 2.3 mV/dec and high transconductance at 5.5 k enabled by dopant segregated silicide Source/Drain
Y Han, J Sun, JH Bae, D Grützmacher, J Knoch, QT Zhao
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023
Mandates: German Research Foundation
Vertical heterojunction Ge0. 92 Sn0. 08/Ge GAA nanowire pMOSFETs: Low SS of 67 mV/dec, small DIBL of 24 mV/V and highest gm, ext of 870 μS/μm
M Liu, V Schlykow, JM Hartmann, J Knoch, D Grützmacher, D Buca, ...
2020 IEEE Symposium on VLSI Technology, 1-2, 2020
Mandates: Federal Ministry of Education and Research, Germany
Impact of the backgate on the Performance of SOI UTBB nMOSFETs at cryogenic temperatures
Y Han, F Xi, F Allibert, I Radu, S Prucnal, JH Bae, S Hoffmann-Eifert, ...
2021 Joint International EUROSOI Workshop and International Conference on …, 2021
Mandates: German Research Foundation
Tackling hillocks growth after aluminum CMP
MR Mueller, K Kallis, S Menzel, U Kuenzelmann, I Petrov, J Knoch
Proceedings of International Conference on Planarization/CMP Technology 2014 …, 2014
Mandates: German Research Foundation
Reaction-diffusion model for hydrogen release from PECVD silicon nitride
P Dani, L Rizzi, J Franz, J Knoch
2023 IEEE International Interconnect Technology Conference (IITC) and IEEE …, 2023
Mandates: Federal Ministry of Education and Research, Germany
Modeling and prediction of hydrogen-assisted morphological evolution in silicon utilizing a level-set approach
B Sun, SC Scholz, A Kemper, T Grap, J Knoch
Journal of Microelectromechanical Systems 30 (6), 950-957, 2021
Mandates: German Research Foundation
Evaluation of Schottky barrier height at Silicide/Silicon interface of a Silicon Nanowire with Modulation Acceptor Doped Dielectric Shell
S Nagarajan, D Hiller, I Ratschinski, J Knoch, T Mikolajick, J Trommer
2023 Device Research Conference (DRC), 1-2, 2023
Mandates: German Research Foundation
Rapid thermal annealing and reduction process monitoring of graphene oxide thin film on chip
H Amiri, A Nikookhesal, D Murugan, S Scholz, M Frentzen, Y Cao, XT Vu, ...
Mikro-Nano-Integration; 9. GMM-Workshop, 1-4, 2022
Mandates: German Research Foundation, Federal Ministry of Education and Research, Germany
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