| Optical properties of manganese-doped nanocrystals of ZnS RN Bhargava, D Gallagher, X Hong, A Nurmikko Physical Review Letters 72 (3), 416, 1994 | 2743 | 1994 |
| Local structures around Mn luminescent centers in Mn-doped nanocrystals of ZnS YL Soo, ZH Ming, SW Huang, YH Kao, RN Bhargava, D Gallagher Physical Review B 50 (11), 7602, 1994 | 260 | 1994 |
| Encapsulated quantum sized doped semiconductor particles and method of manufacturing same D Gallagher, R Bhargava, J Racz US Patent 6,048,616, 2000 | 227 | 2000 |
| GaN (0001)- surfaces: Composition and electronic properties CI Wu, A Kahn, N Taskar, D Dorman, D Gallagher Journal of applied physics 83 (8), 4249-4252, 1998 | 160 | 1998 |
| Method of manufacturing encapsulated doped particles D Gallagher, R Bhargava, J Racz US Patent 5,525,377, 1996 | 148 | 1996 |
| Doped nanocrystals of semiconductors-a new class of luminescent materials RN Bhargava, D Gallagher, T Welker Journal of Luminescence 60, 275-280, 1994 | 143 | 1994 |
| Homogeneous precipitation of doped zinc sulfide nanocrystals for photonic applications D Gallagher, WE Heady, JM Racz, RN Bhargava Journal of materials research 10 (4), 870-876, 1995 | 116 | 1995 |
| Sol--Gel Processing of Ceramic Films D Gallagher, T Ring Chimia 43 (10), 298-304, 1989 | 74 | 1989 |
| Doped zinc sulfide nanocrystals precipitated within a poly (ethylene oxide) matrix-processing and optical characteristics D Gallagher, WE Heady, JM Racz, RN Bhargava Journal of crystal growth 138 (1-4), 970-975, 1994 | 73 | 1994 |
| Indium-tin oxide thin films by metal-organic decomposition D Gallagher, F Scanlan, R Houriet, HJ Mathieu, TA Ring Journal of materials research 8 (12), 3135-3144, 1993 | 65 | 1993 |
| Pore structures of sol-gel silica membranes LC Klein, D Gallagher Journal of membrane science 39 (3), 213-220, 1988 | 57 | 1988 |
| Method of manufacturing quantum sized doped semiconductor particles R Bhargava, D Gallagher US Patent 6,241,819, 2001 | 32 | 2001 |
| Silica membranes by the sol—gel process D Gallagher, LC Klein Journal of colloid and interface science 109 (1), 40-45, 1986 | 31 | 1986 |
| Photo-assisted annealing process for activation of acceptors in semiconductor compound layers NR Taskar, DR Dorman, D Gallagher US Patent 5,786,233, 1998 | 16 | 1998 |
| Dispersion in nonaqueous solvents for enhanced consolidation D Gallagher Washington Univ., Seattle, WA (USA), 1988 | 8 | 1988 |
| High resolution high output microchannel based radiation sensor V Chhabra, RN Bhargava, D Gallagher, SP Herko, BS Kulkarni, ... US Patent 6,534,772, 2003 | 7 | 2003 |
| Sol-gel Processing of ITO ceramic Films D Gallagher, TA Ring Ceramic Powder Science IV, Ceramic Translations 22, 719, 1991 | 5 | 1991 |
| Photo-assisted nitrogen doping of II-VI semiconductor compounds during epitaxial growth using an amine NR Taskar, D Gallagher, DR Dorman US Patent 5,547,897, 1996 | 3 | 1996 |
| Femtosecond Blue Continuum Generation and its Application to the Time-Resolved Study of Mn2+ Emission in Mn-Doped ZnS Nanocrystals T Sosnowski, PB Klein, TB Norris, RN Bhargava, D Gallagher International Conference on Ultrafast Phenomena, WC. 4, 1994 | 2 | 1994 |
| Ultra-low pressure metal-organic vapor phase epitaxy (MOVPE) method of producing II-IV semiconductor compounds and II-VI semiconductor compounds thus produced NR Taskar, DR Dorman, D Gallagher US Patent 6,113,691, 2000 | 1 | 2000 |
Terry RingProfessor of Chemical Engineering, University of UtahVerified email at chemeng.utah.edu